High-speed MOSFET R6038XNJ2

high-voltage resistancesilicon

Overview
R6038XNJ2 is a high-speed switching N‑channel 600V Super Junction power MOSFET offering low on-resistance and fast switching performance in a compact TOLL surface-mount package. It targets space‑constrained, high power density switching applications such as power supplies for AI servers, data centers and industrial equipment. Gate threshold VGS(th) is specified around 3–5V, supporting common drive conditions and enabling simplified gate drive design.

Features

• Low on-resistance (RDS(on) typ. 0.08 Ω at VGS=10V)
• Fast switching characteristics (trr typ. 291 ns)
• Simplified drive circuit requirements (recommended drive 10 V)
• Pb‑free plating; RoHS compliant
• Halogen‑free mold compound

Application Examples

• Power supplies for AI servers and data centers
• SMPS for industrial and consumer equipment (LLC, PFC, Flyback, etc.)
• Motor drives and inverters for fans, AC servos and other motor applications

Part information (packaging / ordering)
Part Number: R6038XNJ2TRDC
Status: Recommended
Package: TOLL (MO-299)
Packing Type: Taping
Unit Quantity: 2000
Minimum Package Quantity: 2000
RoHS: Yes
MSL: 1

Overview / Development Notes
This device addresses rising power and efficiency requirements by combining reduced conduction and switching losses with improved thermal performance in a market‑common surface‑mount footprint, facilitating compact layouts and second‑source replacement options.

Technical specifications

• Model: R6038XNJ2
• Package Code: TOLL (MO-299)
• Application: Switching
• Number of terminals: 9
• Polarity: N‑channel
• Drain‑Source Voltage V(DSS): 600 V
• Drain Current I(D): 114 A
• RDS(on) (Typ) @ VGS=10V: 0.08 Ω
• Total gate charge Qg: 48 nC
• Power Dissipation PD: 348 W
• Recommended drive voltage: 10 V
• trr (Typ.): 291 ns
• Mounting style: Surface mount
• Storage temperature: -55 °C to 150 °C
• Package size: 11.68 x 9.9 mm (t = 2.4 mm)