High-voltage resistance MOSFET R6024WNJ2

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Overview
R6024WNJ2 is a 600 V N‑channel PrestoMOS™ Super Junction MOSFET in a low‑profile surface‑mount TOLL package. It offers low on‑resistance and fast reverse recovery (trr), making it suitable for high power‑density switching applications such as power supplies for AI servers and industrial equipment. The gate threshold voltage is specified around 3–5 V to support common drive conditions. Improved admittance characteristics reduce loss versus previous series and enable versatile use.

Features

• Fast reverse recovery time (trr) to reduce switching losses
• Low on‑resistance (RDS(on))
• Fast switching speed
• Simple drive‑circuit requirements (recommended drive voltage 10 V)
• Pb‑free plating; RoHS compliant
• Halogen‑free mold compound

Application Examples

• Power supplies for AI servers and data centers
• Power supplies for industrial and consumer equipment (LLC, PFC, Flyback, etc.)
• Motor drives and inverters for fans, AC servos and similar applications

Package / Ordering Summary
Part Number | R6024WNJ2TRDC
Status | Recommended
Package | TOLL (MO‑299)
Packing Type | Taping
Unit Quantity | 2000
Minimum Package Quantity | 2000
RoHS | Yes
MSL | 1

Technical specifications

• Model name: R6024WNJ2
• Part number (ordering code): R6024WNJ2TRDC
• Package code: TOLL (MO‑299)
• Applications: Switching
• Number of terminals: 9
• Polarity: N‑channel
• Drain‑Source Voltage VDS: 600 V
• Drain Current ID: 72 A
• RDS(on) [Ω] (VGS = 10 V, Typ): 0.127 Ω
• Total gate charge Qg: 35 nC
• Power dissipation PD: 245 W
• Drive voltage (recommended): 10 V
• trr (Typ.): 74 ns
• Mounting style: Surface mount
• Storage temperature: -55 ℃ (Min) to 150 ℃ (Max)
• Package size: 11.68 x 9.9 mm (t = 2.4 mm)