High-voltage resistance MOSFET RS4P063BPHZG

for automotive applicationsnot specified

Overview
RS4P063BPHZG is an AEC-Q101 qualified N-channel power MOSFET designed for automotive safety and protection circuits. It features expanded Safe Operating Area (Wide-SOA) and secondary-breakdown suppression to withstand short-duration high-current and high-voltage stresses. Supplied in the standard HPLF5060 package, the device provides improved SOA tolerance compared with standard equivalent-sized products and facilitates replacement evaluation with existing 5060-layouts.

Key Features

• AEC-Q101 qualified
• 100% avalanche tested
• Wide-SOA (expanded Safe Operating Area) with secondary breakdown suppression
• Optimized for short-duration high-current / high-voltage stresses in automotive safety/protection circuits

Development Background
Increasing vehicle electrification requires MOSFETs capable of surviving momentary high-power loads in safety systems. ROHM applied wide-SOA design techniques used in industrial and data‑center devices to this automotive MOSFET to meet the reliability demands of airbag, pretensioner and pyro‑fuse driver applications.

Application Examples

• Airbag inflator ignition circuits
• Seatbelt pretensioner drive circuits
• Pyro-fuse (battery cutoff) drive circuits
• Other automotive safety and protection circuits exposed to short-duration high-current / high-voltage stress

Documentation & Design Resources
Manufacturer-provided resources for evaluation and implementation include device datasheet, ESD and characteristics data, SPICE electrical and thermal models, application notes and thermal design guides.

Specifications

• Part Number: RS4P063BPHZGTCB
• Commercial model: RS4P063BPHZG
• Status: Recommended
• Package: HPLF5060T5LSAH (5060-size)
• Package Code: HPLF5060T5LSAH
• Packing Type: Taping
• Unit Quantity (per reel): 3000
• Minimum Package Quantity: 3000
• RoHS: Yes
• MSL: 1
• Number of terminals: 5
• Polarity: N (N-channel)
• Drain-Source Voltage (Vdss): 100 V
• Drain Current (Id): 170 A
• RDS(on) (Typ) @ VGS = 10 V: 0.0049 Ω
• Total gate charge Qg (Typ): 55 nC
• Power Dissipation (PD): 384 W
• Drive Voltage (recommended): 10 V
• trr (Typ): 70 ns
• Mounting Style: Surface mount
• Storage Temperature: -55 °C (Min) to 175 °C (Max)
• Package Size: 6.0 x 4.9 mm (t = 1.2 mm)
• Common Standard: AEC-Q101 (Automotive Grade)