High-speed MOSFET R6049XNJ2

high-voltage resistancesilicon

Overview
This is a 600V, high-speed switching N-channel Super Junction MOSFET in a low-profile surface-mount TOLL (MO-299) package. It offers low RDS(on), improved admittance compared with previous R60xxYNx series, and a gate threshold VGS(th) targeted at the common 3–5V range to support a wide variety of drive conditions. The package footprint is compatible with common market layouts to simplify replacement and multi-sourcing in existing power supply designs.

Development background
Rising processing loads in data centers and industrial equipment increase the demand for higher power-supply efficiency, reduced heat generation, and higher power density in smaller footprints. This MOSFET was developed to meet those needs by delivering lower conduction and switching losses and by using a surface-mount package with enhanced thermal performance to enable compact, high-density power designs.

Application examples

• Power supplies for AI servers and data centers
• Power supplies for industrial and consumer equipment (LLC, PFC, Flyback, etc.)
• Motor drives and inverters for fans, AC servos and similar applications

Features

• Low on-resistance (RDS(on))
• Fast switching characteristics
• Simplified drive-circuit requirements
• Pb-free plating; RoHS compliant
• Halogen-free mold compound

Technical specifications

• Part Number: R6049XNJ2TRDC
• Commercial name: R6049XNJ2
• Package: TOLL (MO-299)
• Packing type: Taping
• Unit quantity / Minimum package quantity: 2000
• RoHS: Yes
• MSL: 1
• Applications: Switching
• Number of terminals: 9
• Polarity: N-channel
• Drain-Source Voltage V DSS [V]: 600
• Drain Current ID [A]: 147
• RDS(on) [Ω] (VGS=10V, Typ): 0.068
• Total gate charge Qg [nC]: 58
• Power Dissipation (PD) [W]: 448
• Drive Voltage [V]: 10
• trr (Typ.) [ns]: 306
• Mounting style: Surface mount
• Storage temperature (Min) [°C]: -55
• Storage temperature (Max) [°C]: 150
• Package size [mm]: 11.68 x 9.9 (t = 2.4)