High-voltage resistance MOSFET R6055XNJ2

high-speedin semiconductorsilicon

Overview
R6055XNJ2 is a 600V Super Junction N‑channel power MOSFET optimized for high‑speed switching applications. It combines low on‑resistance and fast switching in a compact TOLL surface‑mount package with good thermal performance and a common market footprint. The device supports typical gate threshold voltages around 3–5 V and is suitable for high‑density power conversion and switching systems.

Features

• Low on‑resistance (RDS(on) typ. 0.057 Ω @ VGS = 10 V)
• Ultra‑fast switching characteristics
• Simplified drive circuit requirements (recommended drive 10 V)
• Pb‑free plating; RoHS compliant
• Halogen‑free mold compound

Applications

• Switching devices in power conversion
• Power supplies for AI servers and data centers
• Industrial and consumer power supplies (LLC, PFC, Flyback, etc.)
• Motor drives and inverters (fans, AC servos, etc.)

Product information
Part Number | R6055XNJ2TRDC
Status | Recommended
Package | TOLL (MO‑299)
Packing Type | Taping
Unit Quantity | 2000
Minimum Package Quantity | 2000
RoHS | Yes
MSL | 1

Technical specifications

• Device type: Super Junction MOSFET, high‑speed switching
• Polarity: N‑channel
• Drain‑Source Voltage (VDS): 600 V
• Drain Current (ID): 165 A
• RDS(on) (Typ) @ VGS = 10 V: 0.057 Ω
• Total gate charge Qg (Typ): 67 nC
• Power Dissipation (PD): 521 W
• Recommended Drive Voltage: 10 V
• Reverse recovery trr (Typ.): 372 ns
• Number of terminals: 9
• Mounting style: Surface mount (SMD)
• Storage temperature: -55 °C to 150 °C
• Package size: 11.68 × 9.9 mm (t = 2.4 mm)