High-voltage resistance MOSFET R6020XNJ2

high-speedsilicon

Overview
The R6020XNJ2 is a high-speed switching 600V Super Junction MOSFET in a low-profile TOLL surface-mount package. It offers low on-resistance and improved admittance characteristics versus the conventional R60xxYNx series, enabling lower conduction and switching losses in compact power designs such as AI server and industrial power supplies. Gate threshold voltage is specified at 3–5 V, supporting a wide range of drive conditions.

Key Features

• Low on-resistance (typ. 0.154 Ω at VGS=10 V)
• Fast switching suitable for high-frequency converters
• Compatible with simple driver circuits (typical drive 10 V)
• Pb-free plating; RoHS compliant
• Halogen-free mold compound

Applications

• Power supplies for AI servers and data centers
• Power supplies for industrial and consumer equipment (LLC, PFC, flyback, etc.)
• Motor drives and inverters for fans, AC servos and similar applications

Package & Ordering Information
Part Number | R6020XNJ2TRDC
Status | Recommended
Package | TOLL (MO-299)
Packing Type | Taping
Unit Quantity | 2000
Minimum Package Quantity | 2000
RoHS | Yes
MSL | 1

Technical Specifications

• Model: R6020XNJ2
• Package Code: TOLL (MO-299)
• Application: Switching
• Number of terminals: 9
• Polarity: N-channel
• Drain-Source Voltage (VDS): 600 V
• Drain Current (ID): 60 A
• RDS(on) (Typ) @ VGS=10 V: 0.154 Ω
• Total gate charge Qg: 25 nC
• Power Dissipation (PD): 182 W
• Drive Voltage (typ): 10 V
• trr (Typ.): 250 ns
• Mounting Style: Surface mount
• Storage Temperature Range: -55 ℃ to 150 ℃
• Package Size (mm): 11.68 x 9.9 (t = 2.4)

Notes
Standard-grade product; refer to the datasheet for detailed conditions, thermal guidelines and application recommendations. Automotive use is not recommended.