High-speed MOSFET R6035WNJ2

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Overview
The R6035WNJ2 is a 600V PrestoMOS™ Super Junction N-channel MOSFET in a low-profile TOLL (MO-299) surface-mount package. It combines low on-resistance and fast switching/recovery characteristics for high-density switching power applications, supporting drive thresholds in the 3–5V range common to standard products.

Development Background
Rising power and space constraints in AI servers, data centers and industrial equipment demand higher power density and lower conduction and switching loss. The R6035WNJ2 responds to these requirements by delivering improved admittance and thermal performance in a compact SMD package while maintaining compatibility with common drive conditions and multi-sourcing needs.

Application Examples

• Power supplies for AI servers and data centers
• Switching supplies for industrial and consumer equipment (LLC, PFC, Flyback)
• Motor drives and inverters for fans, AC servos and similar loads

Features

• Fast reverse recovery time (trr)
• Low on-resistance (RDS(on))
• Fast switching speed, reduced switching loss
• Simple drive-circuit requirements (VGS range compatible with standard drivers)
• Pb-free plating; RoHS compliant
• Halogen-free mold compound

Specifications

• Part Number: R6035WNJ2TRDC
• Status: Recommended
• Commercial Name: R6035WNJ2
• Package: TOLL (MO-299)
• Packing Type: Taping
• Unit Quantity: 2000
• Minimum Package Quantity: 2000
• RoHS: Yes
• MSL: 1
• Package Code: TOLL (MO-299)
• Applications: Switching
• Number of terminals: 9
• Polarity: N-channel
• Drain-Source Voltage (VDS): 600 V
• Drain Current (ID): 105 A
• RDS(on) Typ (VGS=10V): 0.095 Ω (95 mΩ)
• Total Gate Charge (Qg): 46 nC
• Power Dissipation (PD): 347 W
• Drive Voltage: 10 V
• trr (Typ.): 85 ns
• Mounting Style: Surface mount
• Storage Temperature: -55 ℃ (Min) to 150 ℃ (Max)
• Package Size: 11.68 x 9.9 mm (t = 2.4)