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MOSFET transistor IPD900P06NM
powerswitchingavalanche

MOSFET transistor - IPD900P06NM - Infineon Technologies AG - power / switching / avalanche

MOSFET transistor - IPD900P06NM - Infineon Technologies AG - power / switching / avalanche

MOSFET transistor - IPD900P06NM - Infineon Technologies AG - power / switching / avalanche - image - 2

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Characteristics

Type: MOSFET
Technology: power, switching
Other characteristics: avalanche, for automotive applications
Current: -16.4 A
Voltage: -60 V

Description

Overview

IPD900P06NM is a P-channel power MOSFET designed for switching and power-management applications.
Technology: OptiMOS™
Polarity: P (P-channel)
Typical package: DPAK (TO-252)

Key electrical parameters

Maximum drain-source voltage (VDS max): -60 V
Maximum on-resistance (RDS(on) max): 90 mOhm

Product identifiers and classification

Manufacturer: Infineon Technologies
Manufacturer part number (MPN) / ISPN: IPD900P06NM
Ordering part number (OPN): IPD900P06NMATMA1
ISPN ID: 23206
SP Number: SP004987258
Family: P-Channel
Product status: active

Typical package information

Package: DPAK (TO-252)

Applications & positioning

Suitable for P-channel switching, load switching and board-level power management where a DPAK P-channel MOSFET is required.

Technical characteristics / specifications

Device type: P-channel power MOSFET
VDS (max): -60 V
RDS(on) (max): 90 mOhm
Package: DPAK (TO-252)
Technology: OptiMOS™
Polarity: P

Catalogs

IPD900P06NM

10 Pages

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