MOSFET transistor ISC151N20NM6

powerswitchingaudio

ISC151N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less paralleling, and better EMI behavior. The improved switching behavior makes it also an ideal choice for any type of switching application such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS. Features 42 % lower RDS(on) Excellent EMI & Switching behavior due to: 45% lower QRR(typ) 42% lower QOSS(typ) More than 3 times softer diode Improved capacitance linearity Tight VGS(th) and low transconductance for ease of paralleling Improved SOA to enhance robustness Benefits Low conduction losses Low switching losses Stable operation with improved EMI Less paralleling required Better current sharing when paralleling RoHS compliant, lead free MSL 1 classified according to J-STD-020