IGBT transistor 5SN series
powerswitching

IGBT transistor
IGBT transistor
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Characteristics

Type
IGBT
Technology
power, switching
Current

Max.: 3,600 A

Min.: 150 A

Voltage

1,200 V, 1,700 V, 3,300 V, 4,500 V, 6,500 V

Description

Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low losses combined with soft-switching performance and record-breaking Safe Operating Area (SOA). The newly introduced 62Pak and LoPak fast switching medium-power IGBT modules feature lowest switching losses, full 175 °C operation with full square SOA and standard package allowing drop-in replacement.

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.