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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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Characterized by high innovation trends based on an old fashioned technology, ST's power bipolar transistors have evolved from general purpose devices to Application Specific Products. The new enhanced collector diffused technology has been tailored for very high voltage horizontal deflection circuit used in high end TVCs and monitors. The low voltage product range has been enlarged with the latest base island technology to provide the best performance in low-medium power applications, targeting the computer consumer market segments in motherboards, hard-disk drivers, mobile chargers, emergency lighting, laptop back light illumination.
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High Voltage NPN Transistor
Features:
- High Voltage
- High Speed Switching
Structure:
- Silicon Triple Diffused Type
- NPN Silicon Transistor
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PRODUCT DESCRIPTION:
Libratherm offers four channel SCR firing cards model SCRF-4 for electrical Heating control using resistive or inductive loads. Normally the solid state relays are built around triacs and which are available up to the current carrying capacity of maximum 50 to 100Amp @ 230VAC, due to limitations of high PIV as compared to SCRs. Normally, for controlling the higher ratings of load, power contactors are used and solid state switching is not easily accomplished. The card SCRF-4, featured here can be used to fire up to 500Amps SCRs. Hence, it is possible to built solid state relay of as high as 500Ampere @ 230VAC or 415 VAC. The input control signal coming from the temperature controller in the range of 3 to 32VDC can be fed to this card to generate ZERO cross over Gate to Cathode pulses G1K1+G2K2 to turn ON the SCR, and the same can be turned off when the input signal is 0VDC. ZERO cross over circuit prevents generation of harmonics while turning the SCR OFF to ON or vice versa.
Using the single card, maximum 4 independent back to back SCRs can be fired. User has a choice to select suitable ratings of back to back SCR as per the current demand (with suitably rated heat sinks). Making the solid state relays using this card is more advantageous, since, rapid on/off switching of the order of 1 second is possible, and hence can be operated in PID control mode, when compared to the power contactors. The card SCRF-4 is available in DIN mounting card holder. SCRF-3 is a single card with built in supply – so that potential free contact can also be used to fire 3 independent back to back SCR for single phase or three phase load.
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Eris is a Taiwan based company, specialised in manufacturing rectifiers/ diodes. All of Eris’ products are employed the strict quality control by state-of-the-art equipments with very competitive prices, especially Schottky diodes. Our e-catalogue is on the link: http://tw.eris.com.tw/catalogue.pdf
If you need more information or favorable quotation, we welcome you to contact with Ms. Cindy Lin through her email add.: cindy.lin@eris.com.tw
We are looking forward to hearing from you soon!
Best Regards,
Eris Technology Corporation
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Renesas offers full lineup of high performance, small footprint diodes from Schottky, Zener to high frequency Variable Capacitance and PIN diodes. MP6 package (0603 compact exterior width of 0.3mm) is one of the world’s smallest packages, which accommodates PIN diode of extremely low capacitance with Renesas’s original trench structure.
For complete lineup of Renesas general-use and high frequency diodes, visit the URL below.
http://eu.renesas.com/fmwk.jsp?cnt=diode_landing.jsp&fp=/products/discrete/diodes/
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FEATURES:
• LOW COST
• HIGH RELIABILITY
• SMALLER CASE SIZE THAN COMPETITION
• SPECIAL SELECTIONS AVAILABLE
• SUPERIOR LOT TO LOT CONSISTENCY
• LEADED DEVICES AVAILABLE
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Features:
- Fast Switching Diode (Trr <4.0nsec)
- Flat Lead, Surface Mount Device under 0.70mm Height
- Extremely Small Outline Plastic Package SOD523F
- Moisture Level Sensitivity 1
- Pb-free Version and RoHS Compliant
- Matte Tin (Sn) Lead Finish
- Green Mold Compound
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Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
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Higher performance levels in terms of recovery behavior, junction temperature, leakage current and switching losses, place ST's Rectifiers at the cutting edge of this sector.
Based on a large portfolio of Schottky Barrier (Signal and Power), including new avalanche rating, Bipolar Ultrafast Turbo 2 and Tandem diodes, Damper and Modulation devices, ST offers advanced and well-proven solutions for Power factor Corrector (PFC) lead, efficient Switch Mode Power Supply (SMPS) designs, Energy recovery for Plasma Display Panel (PDP), and more.
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Toshiba continues to offer the broadest line up of discrete products. Toshiba's Discrete solutions cover a breadth of products including Optoelectronics, Logic ICs, Small Signal, Microwave, Radio Frequency (RF) ICs, and Power devices.
Toshiba Power Semiconductors, RF, and Small Signal low frequency discrete devices consists of a wide array of Diodes, Linear ICs, Semi Custom ICs, Sensors, Thyristers, Triacs, and Transistors. Toshiba's Discrete products are designed for applications that require high reliability, power efficiency and a compact design.
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The SP725 is an array of SCR/Diode bipolar structures for ESD and overvoltage protection of sensitive input circuits. The SP725 has 2 protection SCR/Diode device structures per input. There are a total of 4 available inputs that can be used to protect up to 4 external signal or bus lines. Overvoltage protection is from the IN (Pins 1 - 4) to V+ or V-.
The SCR structures are designed for fast triggering at a threshold of one +VBE diode threshold above V+ (Pin 5,6) or one –VBE diode threshold below V- (Pin 7,8). From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one VBE above V+. A similar clamp to V- is activated if a negative pulse, one VBE less than V-, is applied to an IN input.
Features:
ESD Interface per HBM Standards
IEC 61000-4-2, Direct Discharge........... 8kV (Level 4)
IEC 61000-4-2, Air Discharge................15kV (Level 4)
MIL-STD-3015.7..................................................25kV
Peak Current Capability
IEC 61000-4-5 8/20 μs Peak Pulse Current...... ± 14 A
Single Transient Pulse, 100 μs Pulse Width....... ± 8A
Designed to Provide Over-Voltage Protection
Single-Ended Voltage Range to......................... +30V
Differential Voltage Range to............................. ±15V
Fast Switching...............................................2ns Risetime
Low Input Leakages...........................5 nA at 25 ºC Typical
Low Input Capacitance....................................5 pF Typical
An Array of 4 SCR/Diode Pairs
Operating Temperature Range..................-40ºC to 105ºC
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1.0 A Glass Passivated Bridge High Efficient Rectifiers
Features
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High temperature soldering guaranteed: 260C / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension
- Small size, simple installation Leads solderable per MIL-STD-202, Method 208
- High surge current capability
Maximum Ratings and Electrical Charcteristics:
- Rating at 25 C ambient temperature unless otherwise specified.
- Single phase, half wave, 60 Hz, resistive or inductive load.
- For capacitive load, derate current by 20%
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Part: IRF5851
Description: 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
IRF5851TR A IRF5851 with Tape and Reel Packaging
IRF5851TRPBF Similar to IRF5851TR with Lead-Free Packaging.
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Power Transistor Arrays (Multi-chip, 4 Circuits) ;Small Signal Transistor Arrays (Multi-chip) ;Small Signal Transistor Arrays (Monolithic) ;J-FET+Bipolar Transistors
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Toshiba offers an ultra linear GaAs FETs product family, designated the UL family, for C-Band frequency range with higher gain, lower intermodulation distortion and higher efficiency. The UL product family includes products from 4 watts (W) up to 25W and was developed for point-to-point microwave digital radio for terrestrial communications and block up converter or VSAT terminal for satellite communications.
Toshiba America Electronic Components, Inc. (TAEC) is the North American engineering, manufacturing, marketing, and sales arm for Toshiba Microwave Semiconductors. TAEC has established customer service, engineering support sales offices, and sales representatives throughout North America to provide the best possible service.
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THE ModSTACK™ FAMILY includes Infineon Technologies IGBT modules with IGBT driver to achieve current ratings from 100 A up to 1600 A at line supply 690 V AC. The appropriate interfaces and thermal management are included. All inverter topologies (B6U+B6I; B6I+B6Ietc.) and various converter topologies are available.
THE PrimeSTACK FAMILY is a complete switch assembly for power electronic circuits containing all the necessary components for current, voltage and temperature measurement based on the established 62mm IGBT modules. Control electronics and power section are fully separated from each other by “reinforced isolation”. With several superior monitor functions, PrimeSTACK offers a self protecting switch function. With PrimeSTACK highly efficient and safe inverters can be developed very fast with minimum effort for the designer. The product scope covers chip current ratings from 100 A up to 3600 A at 600 V, 1200 V or 1700 V.
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Part: IRG4P254S
Description:250V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
IRG4P254S A IRG4P254S with Standard Packaging
IRG4P254SPBF Similar to IRG4P254S with Lead Free Packaging
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JFETs − General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
- N−Channel for Higher Gain
- Drain and Source Interchangeable
- High AC Input Impedance
- High DC Input Resistance
- Low Transfer and Input Capacitance
- Low Cross−Modulation and Intermodulation Distortion
- Unibloc Plastic Encapsulated Package
- Pb−Free Packages are Available*
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The FH1 is a high dynamic range FET packaged in a lowcost
surface-mount package. The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The device
combines dependable performance with superb quality to
maintain MTTF values exceeding 100 years at mounting
temperatures of +85 °C. The FH1 is available the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH1 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
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The AMMC-3040 is a broadband Double-Balanced Mixer (DBM) with an integrated high-gain LO amplifier. This MMIC can be used as either an up converter or down converter in microwave or millimeter wave applications. If desired, the LO amplifier can be biased to function as a frequency multiplier to enable second harmonic mixing of the LO input. The mixer section ofthe AMMC-3040 is fabricated using a suspended metal system to create a unique, broadside-coupled balun structure (patent pending) to achieve exceptional bandwidth. The MMIC provides repeatable conversion loss without tuning, making it highly suitable for automated assembly processes. For improved reliability and moisture protection, the die is passivated at the active areas.
Features
- High IIP3: +23 dBm
- Wide bandwidth
- RF: 18-36 GHz
- LO: 18-36 GHz
- IF: DC-3 GHz
- Fundamental or subharmonic mixing
- Up or down converter
- Conversion loss: 9.5 dB
- P1dB: +17 dBm
- Low LO drive power: +2 dBm
- Usable to 42 GHz
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We offer a new family of EiceDRIVER ™ IGBT / MOSFET gate driver ICs for applications from 600V up to 1200V blocking voltages. Based on innovative technologies including thin-film Silicon-On-Insulator technology (600V) and Coreless Transformer Technology (1200V), higher reliability, lower losses and better performance can be achieved.
Coreless Transformer Technology (CLT) allows the integration of a pulse transformer into an IC, combining the advantages of HVIC technology with the capability of a magnetic coupler. This results in an extremely rugged IC with high insulation capability. CLT allows faster switching speeds with no performance degradation compared to optocouplers, therefore providing constant reliability over the projected lifetime.
Thin-Film Silicon On Insulator (SOI) technology is an advanced technique for MOS/CMOS fabrications. It differs from the conventional bulk process by placing the active transistor layer on the top of an insulator. This leads to outstanding robustness against latch-up when exposed to extreme temperature and voltage conditions.
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Phototransistors are examples of photodiode-amplifier combinations integrated within a single silicon chip. These combinations are put together in order to overcome the major fault of photodiodes: unity gain. Many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. While the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost effective as the use of phototransistors. The phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small signal transistor. While not required for operation of the device as a photodetector, a base connection is often provided allowing the designer the option of using base current to bias the transistor. The typical gain of a phototransistor can range from 100 to over 1500.
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Silicon Phototransistors:
Various package types (SMT and through hole); with or without daylight filter.
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1.0 AMP. Fast Recovery Rectifiers
Features:
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
Mechanical Data
- Cases: Molded plastic
- Epoxy: UL 94V-0 rate flame retardant
- Lead: Pure tin plated, lead free, solderable per MIL-STD, Method 208 guaranteed
- Polarity: Color band denotes cathode end
- High temperature soldering guaranteed: 260 C/10 seconds
- Weight: 0.22 g
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10th Generation Power MOS FETs from Renesas deliver lower gate charge loss and lower conduction loss, which means less heat generation and higher efficiency of energy use. 10th Generation Power MOS FETs with on-chip Schottky Barrier Diode (SBD) are also available both in single and dual format.
The new DrMOS, a driver IC and two MOS FETs incorporated in a single 56-pin QFN package, is a great space saver with large current capability and high power efficiency.
To learn more about the latest development of Renesas Power MOS FETs, click here.
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General Description
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild's monolithic SyncFET technology.
Features
- Max rDS(on) = 4.8mOhm at VGS = 10V, ID = 18A
- Max rDS(on) = 7.0mOhm at VGS = 4.5V, ID = 15A
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low rDS(on) and fast switching
- High power and current handling capability
- 100% Rg (Gate Resistance) tested
- Termination is Lead-free and RoHS Compliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore low side switch
- Point of load low side switch
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Transistors, Diodes, Thyristors
