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To meet rapidly changing customers’ needs for lower power consumption and faster read/write cycles, Renesas offers full range of Low Power SRAM and Fast SRAM products.
Renesas Low Power SRAM delivers several advantages over conventional SRAM: ultra low standby current, higher reliability with on-chip ECC and lead-free to comply with RoHS.
The lineup of Fast SRAM products includes synchronous, late-write, DDR, QDR, DDR II, DDR II+, QDR II and QDR II+. QDR II+ is ready for max. 533 MHz frequency for the most demanding applications.
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F-RAM products combine the nonvolatile data storage capability of ROM with the benefits of RAM, which include a high number of read and write cycles, high speed read and write cycles, and low power consumption. Our F-RAM product line features various interfaces and densities, which include industry-standard serial and parallel interfaces; industry standard package types; and 4-kilobit, 16-kilobit, 64-kilobit, 256-kilobit, 1-megabit, and 4-megabit densities.
All Ramtron F-RAM products have three distinct properties that make it superior to other nonvolatile memory technologies:
- Fast write speed
F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes nonvolatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds, essential in applications like auto safety systems.
- High endurance
F-RAM offers virtually unlimited write endurance, which means it doesn’t wear out like other nonvolatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 1E5 cycles, making them unsuitable for high-endurance applications.
- Low power consumption
F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, or even less on more advanced processes.
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Elpida's Mobile RAM™, which combines advanced process technology, integrated circuit design technology and high-end mounting technology, supports the constant evolution of mobile phones, smart phones and next-generation mobile devices. Mobile RAM special low-power functions include partial array self-refresh, deep power down mode, automatic temperature compensation self refresh and programmable driver strength. Elpida's advanced packaging technology is also found in PoP, MCP and FBGA Mobile RAM.
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DDR SDRAM transfers 2-data per clock cycle and is widely used in various fields. Elpida's high-density and high-speed DDR SDRAMs provide value while meeting a variety of system needs.
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In the DDR2 SDRAM product area, Elpida has used advanced process technology to develop the high-speed low-power DDR2-1066. Also, Elpida provides a line-up of products having a range of densities and low-voltage DDR2 for consumer electronics able to meet unique customer requirements in the age of growing digital convergence. Beyond servers and PCs, Elpida provides memory solutions tailored to digital television, Blu-ray disc recorders and players, set-top boxes and other advanced digital applications.
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SMART offers a comprehensive lineup of DRAM memory modules ranging in technologies from legacy FP/EDO, SDRAM, DDR1 and DDR2 to leading-edge high performance DDR3 modules. These modules encompass a broad range of form factors and functions including older SIMMs and DIMMs to newer types of SO-DIMMs, FB-DIMMs, very low profile (VLP) DIMMs and mini-DIMMs for space-constrained blade server and networking applications. The modules are available in multiple configurations and in densities up to 8GB. SMART offers custom module designs based on specific OEM requirements. Electrical simulation and thermal modeling are part of the design process for high performance DDR and DDR2 memory modules. SMART develops its own set of comprehensive test programs that are used on high-end functional ATE testers. SMART's high performance modules meet stringent and rigorous quality requirements targeted for operation in enterprise class systems.
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Ferroelectric memory, FRAM (Ferroelectric RAM) is a non-volatile memory offering high-speed writing, low power consumption and long rewriting endurance. It reduces the burden of OEM development because there is no need to differentiate between RAM and ROM. Furthermore, because no batteries are needed, the use of FRAM has benefits for manufacturing, maintenance and the environment. Fujitsu FRAM products include LSI devices for standalone memory smart cards and RFID. We also respond flexibly to customer requirements by creating custom LSI.
Fujitsu has delivered more than 300 million FRAM devices. We lead the world in developing and manufacturing FRAM.
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Intel® NOR Flash Memory: Intel continues to deliver the most complete combination of cost effective, yet high performance NOR flash memory, innovative packaging and feature rich flash management software.
Advance your designs to the next level by taking advantage of the family of high-performance NOR flash memory solutions from Intel. With leading-edge features, a broad range of densities and proven reliability, Intel® NOR Flash Memory is the smart choice to help reduce your design cycle and accelerate your time-to-market. Intel is unsurpassed in its commitment to cellular and embedded market segments, and offers a dedicated NOR flash manufacturing network to provide supply when you need it.
Intel® NAND Flash Memory: Intel enhances the user experience in a variety of applications with Intel® NAND Flash Memory. Single- and multi-level cell products deliver the right combination of capacity, performance and value to meet diverse application requirements.
Enhance user experiences in a variety of applications with Intel® NAND Flash Memory. Single- and multi-level cell products in a broad range of densities deliver the right combination of capacity, performance, and value for the diverse needs of embedded and compute platforms.
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Hynix Semiconductor Inc. provides NAND Flash technologies applicable to all storage devices such as memory sticks, MMCs, SDs, CFs, xD picture Cards, and USB Flash Drives. Hynix Semiconductor Inc. is a total solution provider for various applications of Digital Cameras, Camcorders, Audio Players, Handhelds, Labtops or Desktop Computers, and Mobile Phones via MCP, SiP, SoC, and other technologies.
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STMicroelectronics offers a complete NAND Flash memory product range, intended for the growing number of applications that can benefit from a wider spectrum of densities, a modular interface, and footprint independent from density. NAND Flash products are offered with 1.8 V and 3 V power supply as well as an extensive packaging roadmap.
STMicroelectronics is a leading Supplier of NOR Flash subsystem solutions for Mobile Applications, offering reliable, advanced and state-of-the-art technology devices.
ST's M29 series of Flash Memories meets the most demanding needs of designers looking for 1Mbit to 64Mbit density, with the added advantages of ease of use and reliability.
The range includes the M29W series of 3V supply and the M29F series of 5V supply types.
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Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs of NANDFlash's humongous density.
SAMSUNG's NAND Flash has firmly established itself as the key solution in many popular yet relatively new products such as digital still camera, Handsets, MP3 players and USB Flash drives, etc.
NOR flash is a non-volatile memory that can hold the stored data even when the power is out. It also allows random data access, and provides fast reading and processing of data, which first made it ideal for code storage.
With the increased use of mobile devices like cellular phone, PDA, digital camera, portable game consoles and MP3P, NOR flash is more widely used not only for code storage but also for data storage. It is also used in home appliances such as HDTV, DVD, Router, and GPS, and industrial and automotive uses are on the rise as well.
SAMSUNG's NOR flash is widely recognized for its superior features. The company also provides a total solution in the form of MCP, by offering a wide range of products including SRAM, UtRAM, NAND, and DRAM.
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SMART has announced its new XceedCF line of low-power high-performance CompactFlash products. Available in densities from 64MB to 16GB, the new XceedCF cards featuring high performance combined with low power, this new industrial-grade product line is an extension of SMART's popular Xceed Flash family, which already includes the high-performance XceedUltra and low-power XceedLite solid state drives.
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The need for socket identification, PCB ID or higher level equipment registration by means of an unsophisticated, reliable device at moderate cost becomes a must for modern logistics. Configuration definition and/or traceability of subassembles and/or complete equipment can be achieved by integrating a 64bit ROM on printed wiring board level: The particularity of the device is its communication via the power supply lines (1 wire protocol) and its operation without stand-by power.
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Freescale Semiconductor, a leading provider of magnetoresistive random access memory (MRAM) products, is providing non-volatile MRAM technology for an industrial touch-screen application developed by Siemens' Industry Automation division
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PC-Cards PCC20x/xx
- Memory capacity 8 / 16 / 32 / 64 MB
- Access width 16 bits
- Designed as 5 V card
- Program voltage of 12 Vpp
- Write protection via operating software
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Cypress is a leader in multi-port memory solutions, offering the most flexible, highest performance interconnects in the industry. Cypress's portfolio of more than 160 synchronous and asynchronous interconnects range in densities from 8 Kb to 36 Mb and support speeds of up to 250 MHz.
Cypress's High Density dual-ports are the ideal solutions for inter-processor communication in a wide range of industrial applications ranging from cellular base station to image processing equipment. Our brand new family of interconnects, the FullFlex(TM) family, offers the highest performance and most advanced features available on the market. In complement, for high volume consumer applications (wireless handsets, PDAs, STB), Cypress's MoBL(R) dual-ports are the lowest-power, quickest time-to-market interconnect solutions in the industry.
Fteatured with : Densities: 8 Kb up to 36 Mb ; Voltage: 5V, 3.3V, 1.8V and 1.5V versions ; Operation: Synchronous and asynchronous architectures ; Bus Width: x8, x9, x16, x18, x36, and x72 configurations ; Distinguishing; Features: Variable Impedance Matching (VIM), Deterministic Access Control (DAC), DDR mode, Echo Clocks, Selectable IO Standards, and up to 250MHz speeds.
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Nonvolatile (NV) SRAM
These devices have fast reads/writes and the endurance of SRAM with the convenience of nonvolatile multiple memory configurations and package options available.
Single-Piece SMT Modules
Industry's only single-piece, surface-mount, nonvolatile (NV) SRAMs, these modules eliminate manual cap attachment and use standard pick-and-place equipment/reflow processes for assembly.
DIP Modules
These modules are high-performance NV SRAMs with unlimited write-cycle endurance. Available options include battery- and system-monitoring functions.
PowerCap Modules
These devices are similar to the DIP modules, but they are available in surface-mount packages.
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Toshiba has consistently led the way in developing non-volatile memory solutions for the consumer market, beginning as the principal inventor of NAND- and NOR- type Flash memory in the 1980s. Today, Toshiba is a leading supplier of Multi-Level Cell NAND Flash memory and offers a complete line of removable and embedded NAND Flash memory solutions.
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ST's Non-Volatile RAM (NVRAM) products protect data, even in the absence of power, and have fast RAM write speeds with unlimited endurance.
ZEROPOWER® devices range from 16Kbits to 32Mbits, while TIMEKEEPER® products include non-volatile Real-Time Clocks (RTCs) and range from 1Kbit to 4Mbits. TIMEKEEPER Supervisors offer customizable functions such as RTC, POR/LVD, Early Power-Fail Warning, Battery Monitor, Battery Switchover, and Write Protection.
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Description
The EDR2518AB (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including
computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays.
Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/883 is fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
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STMicroelectronics' Random Access (RAM) portfolio complements ST's memory offer to give customers an easier sourcing process for all their memory needs, plus the security of the same level of quality, service and value.
In terms of product performance, technology, architecture and design modularity ST's LPSRAM and Pseudo SRAM families offer a highly competitive solution, making them suitable for many industrial, consumer, telecom and portable applications.
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SDRAM was developed immediately after EDO generation products. It is a breakthrough in that it synchronizes the frequency to the system clock that controls CPU. Synchronization of CPU and frequency minimizes time delays and facilitates memory retrieving process.
SDRAM has been used for PC, server and network, and now its usage is expanding to various consumer electronics such as printer, DSC, HDD and STB.
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Density: 256M bits Organization -4M words x 16 bits x 4 banks
Package: 54-pin plastic TSOP (II) -Lead-free (RoHS compliant)
Power supply: VDD, VDDQ = 3.3V +/- 0.3V Clock frequency: 166MHz/133MHz (max.) Four internal banks for concurrent operation
Interface: LVTTL Burst lengths (BL): 1, 2, 4, 8, full page
Burst type (BT): -Sequential (1, 2, 4, 8, full page)
Interleave (1, 2, 4, 8)
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General Description
Since the introduction of the world's first Graphics DDR SDRAM in 1999, Hynix has played a leadership role in the graphics memory market by offering cost effective solutions while pushing the limits of performance.
Last November Hynix introduced the world first 1Gb GDDR5 which is the fastest and highest-density graphics memory available. This cutting-edge product can process data at the speed of 20GB/s.
This product will be widely used in high-end PC graphics, workstations and next generation game consoles which will require higher graphics performace and quality to deliver a rich entertainment experience to the end user
Hynix now offers a complete full line-up of Graphics memory products with the release of the 1 Gb GDDR5
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General Description
We now live in the Digital era. Consumer memory market grows with Digital TVs, set top boxes, DVDs printers, car navigators, MP3 players, so called digital consumer applications. If you've bought one of these, you've already bought consumer memory together . Although hidden from view, consumer memory is essntial for digital consumer applications and our pleasant life.
Features for consumer memory
Hynix has full line-up of DRAM to meet the needs of a wide range of consumer applications.
Hynix offers a family SDR SDRAM in 64Mb~256Mb, DDR1 in 64Mb~512Mb and DDR2 in 256Mb~1Gb densities, packaged in TSOP-II & FBGA offered at industrial range temperatures and featuring very low power consumption.
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This Hynix unbuffered Small Outline Dual In-Line Memory Module(SODIMM) series consists of 1Gb A version.DDR3 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 204 pin glass-epoxy substrate.This DDR3 Unbuffered SODIMM series based on 1Gb A ver. provide a high performance 8 byte interface in 67.60mm width form factor of industry standard.
It is suitble for easy interchange and addition.
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The HY64SD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption.The HY64SD16162B adopts one transistor memory cell and is organized as 1,048,576 words by 16bits.
The HY64SD16162B operates in the extended range of temperature and supports a wide operating voltage range.The HY64SD16162B also supports the deep power down mode for a super low standby current.
The HY64SD16162B delivers the high-density low power SRAM capability to the high-speed low power system.
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XDR DRAM(eXtreme Data Rate DRAM ) is based on XDR memory interface technology developed by Rambus and offers several innovative techniques that include ODR(Octal Data Rate), DRSL(Differential Rambus Signaling Level) and etc.
As a result, XDR DRAM achieves an order of magnitude higher performance than today's standard memories.
XDR DRAM has three speed grades, ranging from 2.4GHz to 4.0GHz, with the expectation that data transfer speeds will rise to 8.0GHz in the near future.
XDR DRAM is best memory solution for wide-ranging applications including video console games, digital televisions, computer servers, workstations and other applications where high bandwidth and low latency are required.
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Under a licensing arrangement with US-based Rambus, Inc. (http://www.rambus.com/xdr/), Elpida was the first to commercialize a 1-gigabit XDR DRAM based on x32-bit configuration. The XDR product features an ultra-fast speed of 7.2GHz for a 28.8-gigabytes/second data transfer rate with a single device, making it ideal for such high-bandwidth, high-performance full HD-capable applications as game consoles, digital televisions and Blu-ray disc recorders and players.
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