Schottky diodes

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Page 18 Product features THE DIODES ADVANTAGE Did you know? Our Transistor and Schottky Diodes combined in the DFN package offer a compact solution for DC-DC converter applications. Package footprint just 3 x 2mm. Offers excellent power density. NPN and PNP options with Schottky diode. Low

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provides a broad portfolio of discrete semiconductors comprising Bipolar Transistors, MOSFETs, Schottky diodes, SBR, switching diodes and functional specific arrays to enable our customers? next generation designs. The Diodes' Analog IC portfolio consists of 6 main areas: Power Management ICs

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Dual PNP Transistors up to 25V NPN Transistors 30V to 50V Product features THE DIODES ADVANTAGE Did you know? PNP transistors in DFN packaging are the preferred choice in battery charging applications. 20V devices. High gain to minimize Base drive requirements. No Schottky diode required

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Dual PNP Transistors 55V to 100V 14 NPN Transistors >100V 14 PNP Transistors >100V 15 Gate Driver Transistors 16 Avalanche Transistors 16 H-bridge Transistors 17 Darlington Transistors 17 Transistor & Schottky Combinations 18 Industry Standard Transistors NPN Transistors 19 PNP Transistors

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BTB 1 | Apr 2010 www. CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE Kustermann-Park Balanstrasse 59, 8th Floor D-81541 Munchen, Germany Tel: (+49) 89 45 49 49 0

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56 Silicon Carbide Schottky Diodes Silicon Carbide (SiC) is a revolutionary material for power semiconductors; its physical properties outperform Silicon devices by far. Infineon offers SiC Schottky diodes in 600V and 1200V. Features . Benchmark switching behavior . No reverse recovery . No

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C Schottky barrier Diode 1200V S2?S5 Unfolding bridge CoolMOS? 800V ? 900V

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57 Packages Power ICs IGBT Silicon Carbide High Voltage Low Voltage Applications SiC Schottky diodes thinQ!? Second Generation now available in TO-220 FullPAK High efficiency and thermal performance combine in a full isolated solution. The new FullPAK solution combines the high electrical

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59 Packages Power ICs IGBT Silicon Carbide High Voltage Low Voltage Applications 600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM 3G IF [A] Qc [nC] IF SM [A] TO-252 TO-263 TO-220 TO-220 Real 2Pin TO-220 FullPAK 3 3.2 11.5 IDD03SG60C IDH03SG60C 4 4.5 18 IDD04SG60C IDH04SG60C

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58 600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM 2G IF [A] Qc [nC] IF SM [A] TO-252 TO-263 TO-220 TO-220 Real 2Pin TO-220 FullPAK 2 3.2 11.5 IDT02S60C IDV02S60C 3 5 16 IDT03S60C IDV03S60C 4 8 32 IDD04S60C IDT04S60C IDH04S60C IDV04S60C 5 12 42 IDT05S60C IDH05S60C IDV05S60

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Incorporated's SBR portfolio's continual market adoption and increasing market share. SBR ? The Next Generation of Rectifiers Super Barrier Rectifier (SBR) is a proprietary and patented Diodes Inc technology that utilizes a MOS manufacturing process (traditional Schottky uses a bipolar

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reduction in power savings and efficiency. 6. How fast is the TRR of an SBR? A SBR has a TRR comparable Schottky and Ultra Fast rectifiers. For 150V and higher SBR device to Schottky), minority carriers injected in the drift region, slightly slower but softer recovery. >30V ? 150V Schottky Diodes

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0.6 45 280 150 SBR60A45CT Dual 60 45 0.60 30 1 45 350 150 SBR60A45PT Dual 60 45 0.58 30 1 45 280 150 SBR30A50CT Dual 30 50 0.55 15 0.5 50 260 150 SBR0560S1 Single 0.5 60 0.50 0.5 0.1 60 15 150 Product benefits THE DIODES ADVANTAGE PowerDI®5 is a low profile proprietary package that delivers

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.50 30 0.5 40 250 150 SBR4040CT Dual 40 40 0.53 20 0.5 40 280 150 SBR4040CTFP Dual 40 40 0.53 40 0.5 40 280 150 Product benefits THE DIODES ADVANTAGE PowerDI®123 is a low profile power package that delivers thermal performance from a footprint that is 60% smaller industry standard SMA. Industry

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280 150 SBR4060CTFP Dual 40 60 0.70 40 0.5 60 280 150 SBR40U60CT Dual 40 60 0.60 20 0.5 60 280 150 SBR40U60CTE Dual 40 60 0.60 20 0.5 60 230 150 SBR60A60CT Dual 60 60 0.62 30 0.2 60 280 150 Product benefits THE DIODES ADVANTAGE With a thermal resistance of typically 1.5°C/W the Power

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December 2010 Doc ID 18296 Rev 1 1/7 7 STPS60L30C-Y Automotive power Schottky rectifier Features �¡ Very small conduction losses �¡ Negligible switching losses �¡ Extremely fast switching �¡ AEC-Q101 qualified Description 60 A dual center tab Schottky rectifier suitable for automotive

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Characteristics STPS60L30C-Y 2/7 Doc ID 18296 Rev 1 1 Characteristics When diodes 1 and 2 are used simultaneously: ÄTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 2. Absolute rating (limiting value, per diode) Symbol Parameter Value Unit VRRM Repetitive peak

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STPS60L30C-Y Characteristics Doc ID 18296 Rev 1 3/7 Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature per diode (ä = 0.5) 0 2 4 6 8 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 35 40 45 P (W) F

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) Tj = 25 °C (per diode, all anode pins connected)

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screened to Mil-PRF-19500, TX, TXV or S-level ? Custom high voltage bridges are also available SiC Schottky diode switching characteristics are unaffected by temperature, di/dt or forward current; all of which increase reverse recovery current in silicon diodes. SiC Schottky diodes saved 8W at 10KHz

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Sensitron ? 221 West Industry Court ? Deer Park, NY 11729-4681 ? Phone (631) 586 7600 ? Fax (631) 242 9798 ? World Wide Web - www.sensitron.com ? E-mail - sales@sensitron.com SiC Schottky Rectifer Discretes New! SiC Schottky Rectifier Bridges Silicon Carbide Schottky Rectifiers Sensitron www

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133-1010 Silicon Carbide Schottky Rectifiers and Bridges Sensitron · 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com