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To meet rapidly changing customers’ needs for lower power consumption and faster read/write cycles, Renesas offers full range of Low Power SRAM and Fast SRAM products.
Renesas Low Power SRAM delivers several advantages over conventional SRAM: ultra low standby current, higher reliability with on-chip ECC and lead-free to comply with RoHS.
The lineup of Fast SRAM products includes synchronous, late-write, DDR, QDR, DDR II, DDR II+, QDR II and QDR II+. QDR II+ is ready for max. 533 MHz frequency for the most demanding applications.
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Cypress is a leader in multi-port memory solutions, offering the most flexible, highest performance interconnects in the industry. Cypress's portfolio of more than 160 synchronous and asynchronous interconnects range in densities from 8 Kb to 36 Mb and support speeds of up to 250 MHz.
Cypress's High Density dual-ports are the ideal solutions for inter-processor communication in a wide range of industrial applications ranging from cellular base station to image processing equipment. Our brand new family of interconnects, the FullFlex(TM) family, offers the highest performance and most advanced features available on the market. In complement, for high volume consumer applications (wireless handsets, PDAs, STB), Cypress's MoBL(R) dual-ports are the lowest-power, quickest time-to-market interconnect solutions in the industry.
Fteatured with : Densities: 8 Kb up to 36 Mb ; Voltage: 5V, 3.3V, 1.8V and 1.5V versions ; Operation: Synchronous and asynchronous architectures ; Bus Width: x8, x9, x16, x18, x36, and x72 configurations ; Distinguishing; Features: Variable Impedance Matching (VIM), Deterministic Access Control (DAC), DDR mode, Echo Clocks, Selectable IO Standards, and up to 250MHz speeds.
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The HY64SD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption.The HY64SD16162B adopts one transistor memory cell and is organized as 1,048,576 words by 16bits.
The HY64SD16162B operates in the extended range of temperature and supports a wide operating voltage range.The HY64SD16162B also supports the deep power down mode for a super low standby current.
The HY64SD16162B delivers the high-density low power SRAM capability to the high-speed low power system.
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Mobile FCRAM is the PSRAM (Pseudo SRAM) developed for cellular phone. Fujitsu, one of PSRAM top suppliers, has been shipping more than 500 million units since year 2000. Mobile FCRAM interface is based on the asynchronous SRAM and supports page mode and synchronous burst mode for high-speed read and write operation with low power consumption. The Mobile FCRAMs are ideal for general mobile applications such as smart phone, PDA, portable media player(PMP), and portable games.
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SAMSUNG, Cypress, NEC, Renesas and IDT have jointly defined and developed Quad Data Rate (QDR) SRAM technology for high-performance Network applications.
Developed with some of the industry's top system architects, our new QDRII and DDRII architectures are the latest additions to the co-development team's QDR/DDR family of high-performance networking and communication SRAM products. This co-development partnership enables customers the option of choosing from multiple sources for the new SRAMs. Each partner is providing system expertise and product direction that will give customers the benefit of a broad range of market experience and innovative technology.
SAMSUNG's QDRII are available now in volume production, in densities ranging from 18Mb to 72Mb.
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