Leakage tester M2 Wafer Edition

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Short description
The high-voltage wafer test solution for SiC and Si devices. M2 Wafer Edition integrates a 10 kV DC generator to enable early-stage wafer screening of high-voltage power die before singulation, reducing packaging of defective parts and accelerating yield analysis.

Overview
Wide‑bandgap SiC technology enables a new class of high-voltage power devices for transport, power transmission and renewable energy applications. M2 Wafer Edition performs parametric and stress tests up to 10 kV on wafer to verify breakdown, leakage and robustness prior to packaging. The M2 platform is engineered for continuous 24/7 production use: rugged, accurate and modular to support high-volume manufacturing and minimize downtime for operators and maintenance teams. Its expandable architecture allows adding test capabilities as product requirements evolve.

Reasons Why

• Test the highest voltage power products. 10 kV DC generator supports testing of modern wide bandgap architectures at full operating limits.
• Filter defects early. On‑wafer DC, UIS and Rg coverage (Pro variant) identifies faulty die before singulation and packaging.
• Safety and protection. Wafer probing and test generators are protected from UIS-induced breakdown using SocketSafe™ technology.

Product presentation — specifications (variant comparison)
FEATURES / CONFIGURATIONS: Wafer UHV | Wafer UHV Pro

Number of test sites
Wafer UHV: 1 x DC site
Wafer UHV Pro: 1 x combined DC + Rg + UIS site

DC parametric test
Both variants: 10 kV, 200 A (integrated)

Gate oxide and quality
Wafer UHV: —
Wafer UHV Pro: Gate resistance & capacitance measurement

UIS avalanche / body diode quality
Wafer UHV: —
Wafer UHV Pro: 5 kV, 200 A unclamped inductive load (UIS)

Notes
The platform is modular and expandable; the UHV Pro variant integrates combined DC, RG and UIS tests in a single site to characterize gate and body‑diode robustness early in the manufacturing flow.