Leakage tester FTI-1000 Lab

voltagehigh-voltagefor electronic parts

Overview The FTI-1000 Lab is a DC-only characterization platform for medium-power silicon (Si) and wide-bandgap (GaN) devices. It provides programmable DC stimulus up to 1.2 kV and 100 A, enabling accurate extraction of static electrical parameters and high-resolution IV curve tracing. The Lab configuration relies on dedicated DC instrumentation — high-voltage and high-current source modules, nano-amp measurement capability, and flexible biasing — to support a wide range of IV sweeps and parametric tests without AC or dynamic-switching complexity. FTI Studio supplies an intuitive interface for rapid setup, waveform capture, schmoo plotting, and test-program creation.

Applications

• R&D laboratories
• Device qualification
• Engineering validation and characterization workflows

Key capabilities and optimisations

• Programmable DC stimulus up to 1.2 kV and 100 A
• Optimized for high-voltage leakage, breakdown, threshold voltage and on-resistance (Rds(on)) measurements
• Stable, repeatable DC sourcing with precise measurement control
• Modular and scalable architecture with small laboratory footprint
• Supports a broad range of discrete packages and wide-bandgap device engineering

Tabular specifications Number of test sites: 1
DC parametric test: Rdson, Idon, Vce(sat), Vgs, Gfs, Igss, Idss, BVdss, etc.
Thermal die-attach quality: dVsd/Vgs
Dimensions D×W×H: 541 mm × 345 mm × 206 mm (Power Supply: 345 mm × 176 mm × 103 mm)
Digital Channels: Option for 8 independent Digital Channels (IC Channel Board)
DC Source Voltage: 1.2 kV
Current Drive Range (HV): 25 mA (module-specific)
Maximum Current: 100 A
Gate Resistance: 0, 10, 25, 50 Ω, plus user pluggable resistances

Software FTI Studio provides an intuitive interface for rapid setup, waveform capture, schmoo plotting and test-program creation, enabling quick transition from device bring-up to full characterisation.

Technical specifications

• Number of test sites: 1
• Supported DC parametric tests: Rdson, Idon, Vce(sat), Vgs, Gfs, Igss, Idss, BVdss and similar IV/parametric measurements
• Thermal die-attach metric: dVsd/Vgs
• Dimensions: 541 mm × 345 mm × 206 mm
• Power supply unit dimensions: 345 mm × 176 mm × 103 mm
• Maximum DC voltage: 1.2 kV
• High-voltage current drive range (module-specific): 25 mA
• Maximum current capability: 100 A
• Digital channels: optional 8 independent Digital Channels (IC Channel Board)
• Gate resistance options: 0, 10, 25, 50 Ω plus user-pluggable resistances
• Architecture: modular, scalable, lab-optimized configuration
• Target devices: medium-power Si devices and wide-bandgap (GaN) devices
• Software features: waveform capture, schmoo plotting, test-program creation, rapid setup