e2v technologies have developed a 200MHz bandwidth, Very Low-Noise X-band Noise Amplifier with an integral isolator, for Radar Receiver applications.
A novel in-line waveguide to microstrip transition is used to give an axial format to the input and output.
The amplifier chain utilises well-characterised and proven discrete semiconductor stages: the input amplifier stage is single-ended, and designed with low noise HEMT devices; the output stages utilize medium power GaAsFETs in a balanced stage.