Secondary ion mass spectrometer SIMS Workstation

for analysismobilehigh-sensitivity

A UHV surface analysis system for thin film depth profiling Hiden Analytical provides extremely versatile high-sensitivity instrumentation for high performance dynamic and static SIMS (secondary ion mass spectrometry) analysis, unlocking new levels of precision in cutting-edge applications. With an extended range and the ability to acquire and identify both positive (+ve) and negative (-ve) secondary ions, the SIMS workstation is a comprehensive solution for composition analysis and depth profiling applications. For simultaneous +ve and -ve ion analysis in a comprehensive SIMS package, Hiden Analytical has also developed the innovative Hi5 SIMS workstation. Find more information in our product literature below. Secondary ion mass spectrometry, or SIMS, is one of the most sensitive techniques ever developed for interrogating the uppermost surface layers of a material, from depths of several hundred nanometres (nm) to a single atomic layer. It can obtain compositional data down to the parts per billion (ppb) range and is compatible with any material that can reliably be tested in vacuum conditions. Consequently, SIMS instruments are routinely used to analyse ceramics, metals, organic materials, polymers, semiconductors, and more. This technique is broken down into two distinct methodologies: dynamic and static SIMS. Each of these uses a primary ion beam that impacts a sample in vacuum conditions, causing extremely small volumes of material to be ablated from the surface – a fraction of this ejected material will be ionised.