Focused ion beam system MI4050

The MI4050 High-Performance Focused Ion Beam System is equipped with new optics and provides the world-leading SIM imaging resolution and high-definition TEM sample preparation with improved imaging resolution at low kV. The MI4050 accommodates a variety of applications such as cross-section observation, circuit modification, vector scan processing, nano-micro patterning, nano molding, and 3D nano fabrication using deposition function. Greatly Reduced Processing Time Using the Big Probe Current (Maximum probe current 90 nA) Cross-sectional processing of wire bonding (Processing size: W: 95 µm, D: 55 µm; Machining time: 20 min) Ultra-Low Damaged TEM Sample Preparation by Low-kV Processing (0.5 kV or higher) and improved Secondary Electron Image Resolution at Low kV *Less than 1kV is optional High-Precision 5-Axis Motorized Mechanical Eucentric Stage The eucentric stage enables the user to specify the coordinates more accurately to obtain finer alignment for imaging and continuous processing TEM sample preparation.