Silicon drift detector Vortex®

X-raydigitalCMOS

Vortex silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. • X-ray fluorescence (XRF) spectroscopy both bulk and micro-fluorescence • Micro XRF (additional sizes available in near future) • X-ray diffraction (XRD) • Partical Induced X-ray Emission (PIXE) • Total Reflection X-ray Fluorescence (TXRF) • Synchrotron radiation applications • Process control The Vortex is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes. The Vortex X-ray spectroscopy systems include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with our PI-SPEC Software. The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.