Vortex-EZ silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex-EZ detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<140 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.
• X-ray fluorescence (XRF) spectroscopy both bulk and micro-fluorescence
• X-ray diffraction (XRD) and fluorescence (XRF)
• Partical Induced X-ray Emission (PIXE)
• Synchrotron radiation applications
The Vortex-EZ is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes.
The Vortex-EZ X-ray spectroscopy system include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with PI-SPEC Software.
The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.