The GR-511F can control gases used to cool the back side of wafers that are fixed in position by an electrostatic chuck system.
The stability and accuracy of the GR-511F makes it ideal for controlling the flow of Helium and Argon in wafer cooling systems.
FEATURES
Pressure control with more stability and accuracy
Mass flow sensor (Option)
Compatible for various fitting
RoHS compliance
Application example
In the below example, the GR-511F is controling the gases used to cool the back side of wafers that are fixed in position by an electrostatic chuck system.
alve Type - C: Normally close
Leak integrity - ≤ 7 × 10-11 Pa·m3 /s (He)
Maximum operating pressure - 300 kPa (A)
Pressure resistance - 350 kPa (A)
Operating temperature - 5-50 °C (Accuracy guaranteed temp : 15-40 °C)
Power supply - +15 VDC±5 %, 250 mA -15 VDC±5 %, 250 mA
Power consumption - 7.5 VA
Interface - Analog
Gas *1 - He, Ar, N2
Standard fittings - 1/4 inch VCR or equivalent
Pressure full scale - 1.333 kPa (A) (10 Torr), 2.666 kPa (A) (20 Torr),
6.666 kPa (A) (50 Torr)
Pressure control range - 1-100 %F.S.
Pressure accuracy *2 - ±0.5 %R.S.
Zero temperature coefficient - ±0.04 %F.S./°C
Span temperature coefficient - ±0.04 %R.S./°C
Response *3 - ≤ 1 sec
Pressure setting signal - 0.1-10 VDC (1-100 %F.S.) Input impedance ≥ 1 MΩ
Option:0.05-5 VDC (1-100 %F.S.) Input impedance≥ 1 MΩ
Pressure output signal - 0-10 VDC (0-100 %F.S.) Minimum resistance 2 kΩ
Option:0-5 VDC (0-100 %F.S.) Minimum resistance 2 kΩ