PECVD deposition machine SPTS Delta™

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Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process which uses the energy within a plasma to accelerate chemical reactions at the wafer surface to produce thin films at temperatures below 400°C. Energetic ion bombardment during deposition can be used to tailor the films’ electrical and mechanical properties. The SPTS Delta™ PECVD systems are used for a wide range of applications within the RF, power, photonics and MEMS markets, particularly in applications where a low processing temperature is required. The Delta™ fxP cluster system offers a comprehensive library of processes for a wide range of dielectric films and with deposition temperatures from 80°C to 400°C. The system also offers single and multi-wafer preheat chamber options for de-gassing sensitive substrates and edge contact processing capability for wafer back side deposition. SiN passivation for power devices with low power, low damage option for GaN Large stress range, low temperature back side films for bow compensation Highly uniform SiN for MIM capacitor and GaAs device passivation. Tuned RI and doped films for active and passive photonics Bonding layer dielectrics Inter-layer dielectrics Features •Wafersizes from 75mm to 300mm •Radially symmetrical gas flow for superior wafer-in-wafer (WIW) uniformity •Common chamber hardware for ail film types •Stack déposition in a single PECVD chamber •Mixed frequency plasma capability for stress tuning •Active platen coolingforcritical, low temperature [<175°C] applications •High productivity for thick film requirements