For advanced packaging applications, the SPTS Osprey® PECVD system offers low temperature deposition processes compatible with 300mm bonded substrates and mold. Osprey® PECVD produces high quality, production qualified dielectric films at deposition temperatures as low as 110°C SiN – SiO stacks can be deposited in the same PECVD chamber with high reliability electrical performance and stability over time. Film and stack stress can be tuned across a wide range and optimized chamber hardware enables the lowest within-wafer stress range over competing PECVD systems. Where required, single-wafer and multi-wafer degas options are available to heat outgassing substrates and improve deposited film quality. Optimized SiO, TEOS SiO, SiCN and other advanced dielectric films are available for hybrid bonding and inter-die gap-fill applications.
SiCN for hybrid bonding
Thick SiO for inter-die gapfill
Via-reveal passivation
Low temperature back side films with bow compensation
TSV-last liners
Wafer size = 300mm
Radially symmetrical gas flow for superior wafer-in-wafer (WIW) uniformity
Common chamber hardware for all film types
Stack deposition in a single PECVD chamber
Mixed frequency plasma capability for stress tuning
Active platen cooling for critical, low temperature [<175°C] packaging applications
Advanced Packaging