Diamond wire cutting machine GC-SCDW8300

for monocrystalline siliconwaferbar

Product Introduction
This machine is a dedicated multi-wire diamond-wire wafering system for cutting silicon carbide (SiC) ingots. It features an adjustable wheelbase, workpiece oscillation, low kerf loss and reduced wire consumption. Combined with dedicated diamond wire, a high‑precision tension control system and high‑speed cutting technology, it provides stable, high-quality and high-efficiency slicing of 6–8″ × L300 SiC crystals, suitable for industrial wafer production lines.

Key Features

• Multi-wire diamond-wire cutting designed specifically for SiC ingots
• Adjustable wheelbase to accommodate different ingot diameters
• Workpiece oscillation to improve surface finish and reduce chipping
• Low material kerf loss and reduced diamond wire consumption for cost-effective production
• High-precision tension control ensures consistent slice thickness and repeatability
• Supports one-way or two-way wire feeding for process flexibility

Technical Parameters

• Max. workpiece size: 6–8″ × L300
• Wire feeding direction: One-way feeding / Two-way feeding
• Max. wire speed: 3000 m/min
• Cutting method: Downwards cutting
• Rapid feed (fast advance/return): 50–500 mm/min
• Max. swing angle: ±10°
• Max. wire reserve: 120 Km
• Dimension (L × W × H): approx. 4880 × 2100 × 3100 mm
• Equipment weight: approx. 14000 Kg

Applications and Benefits

• Engineered for high-volume SiC wafer production for power electronics and semiconductor substrates
• Stable slicing quality reduces downstream processing and improves yield
• Design suitable for integration into automated industrial production lines
• Large wire reserve and efficient wire management reduce changeover frequency