Product DescriptionDiamond wire developed specifically for silicon carbide slicing. Engineered for stable operation with reduced wire breakage and uniform abrasive distribution. The wire is produced under high-definition monitoring for process traceability and undergoes a special treatment to improve toughness and abrasion resistance.
Key Features- Designed specifically for silicon carbide slicing to match material characteristics
- Automatic control system minimizes fluctuations in abrasive (sand) volume
- Uniform abrasive distribution ensures consistent cutting quality
- High cutting efficiency with reduced incidence of wire breakage
- Production monitored in high-definition for traceability
- Special treatment delivers improved wire toughness and abrasion resistance
Product Parameters (table)Spec. & Model | Diameter of Finished Wire (μm) | Breaking force (N) | Purpose
0.16 mm | 160 ± 10 | ≥ 40 | Silicon carbide slicing
0.10 mm | 100–120 | ≥ 24 | Silicon carbide slicing
0.08 mm | 80–100 | ≥ 14.5 | Silicon carbide slicing
Characteristics / Technical specifications- Intended use: Silicon carbide slicing
- Available finished wire diameters: 0.08 mm, 0.10 mm, 0.16 mm
- Breaking force (N): 0.08 mm — 80–100; 0.10 mm — 100–120; 0.16 mm — 160 ± 10
- Minimum breaking force thresholds: ≥ 14.5 N (0.08 mm), ≥ 24 N (0.10 mm), ≥ 40 N (0.16 mm)
- Design emphasis: enhanced toughness, abrasion resistance, reduced wire breakage, consistent abrasive distribution