InGaAs photodiodes

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in their state-of-the-art spectroscopic devices. Our products are based on PC oriented interface technology for operation with standard computer equipment. NMOS, CCD and InGaAs photodiode arrays are supported. Customers take advantage of tec5 high-quality OEM electronics subunits for spectral

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? Competent consulting and excellent technical support ? Close cooperation with technology leaders ? Outstanding know-how in operation of photodiode arrays and single detectors USA Inc. UK Ltd. China m.u.t Asia Ltd. AG Germany Headquarters Distributors OEM components Australia, China, Italy

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between 900 nm and 2500 nm. tec5 uses latest (extended) InGaAs technology with a high dynamic range of up to 16 bit, excellent signal to noise ratio and wavelength stability. The detector array based design allows the acquisition of complete spectra within milliseconds. MultiSpec® UV-VIS Solarization

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hybrid device that incorporates a micro-optic tap coupler and high-sensitivity InGaAs photodiode in a miniature package. It offers high reliability, compact footprint with ultra-wide bandwidth, and very low polarization dependent loss (PDL). Applications ? EDFA ? Raman amplifiers ? Add

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Avalanche Photodiodes The avalanche photodiodes from our inhouse production are well suited for the recognition of even the smallest amount of light, right down to single photons. They are mainly used for laser radar systems and biomedical applications. InGaAs Avalanche Photodiodes The InGaAs

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LASER COMPONENTS Canada Inc., Canada Production of Pulsed Laser Diodes LASER COMPONENTS DG Inc., USA Production of Avalanche Photodiodes

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by LC Germany PLD/APD-Modules made by LC Germany Pulsed Laser Diodes made by LC Canada Avalanche Photodiodes made by LC USA

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; Production of pulsed laser diodes Packaging capabilities for III-V semiconductors www.lasercomponents.com goes online ISO 9001:2000 Certification of LCC Inc., Canada LCDG Inc., USA, is founded; Production of avalanche photodiodes Calibration laboratory for laser power meters opens at LC Gmb

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In-house Production Laser Optics cw Laser Diodes Pulsed Laser Diodes Avalanche Photodiodes Fiber Assemblies Laser Modules Conversion Screens Detectors UV Detectors VIS Detectors NIR Detectors IR Detectors Pyro Detectors Thermopiles Position Sensitive Detectors Laser Diodes cw

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cost ratio. ? Si NMOS, CCD and InGaAs photodiode arrays supported ? Standard PC interfaces: Ethernet, USB Hi-Speed and PCI, more IF-types available ? Windows 7, Vista, XP and 2000 support, plugand- play with configuration detection ? Ready-to-use programmer interfaces for C#.net, C

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Operation of Detector Arrays tec5 OEM components for spectral data acquisition are designed to read photodiode arrays with high precision through various PC interfaces. Software drivers and function libraries provide access to the Operating Electronics for setting measurement parameters

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the Si NMOS photodiode arrays are standard illumination conditions for applications requiring high dynamics in the wavelength 190-1100 nm. At lower light levels, CCD detector arrays are recommended. photodiode arrays are applied for near-infrared light in the wavelength between 900 and 2500 nm

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? Competent consulting and excellent technical support ? Close cooperation with technology leaders ? Outstanding know-how in operation of photodiode arrays and single detectors USA Inc. UK Ltd. China m.u.t Asia Ltd. AG Germany Headquarters Distributors OEM components Australia, China, Italy

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array (with tec5 preamplifier) or a Spectral Sensor to a PC Interface Electronics. Product Versions ? FEE-HS for NMOS PDAs, 15 bit A/D conversion, optional input multiplexing ? FEE-1M for fast data acquisition, NMOS, CCD and InGaAs arrays, 16 bit A/D conversion For customers who prefer to

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-destructive inspection ? Food inspection ? Agriculture monitoring ? Moisture measurement ? Biomedical & chemical applications ? Pollution and environment monitoring ? Semiconductor process monitoring XLIN 1.7 / 2.2 / 2.5 The InGaAs series of linear photodiode arrays is specifi cally suited for near infrared

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XLIN 1.7 XLIN 2.2 XLIN 2.5 0.9 - 1.7 pm InGaAs Linear Arrays 1.0 - 2.2 pm InGaAs Linear Arrays 1.1 - 2.5 pm InGaAs Linear Arrays /&/ xcnics y Partnering Your Infrared Solution

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.1 - 2.5 512 25 500 TE2/TE3 2 - 5% 0.9 - 1.7 512 25 25 TE0/TE1 INGAAS DETECTOR CHARACTERISTICS | XLIN 1.7 XLIN 2.2 XLIN 2.5 R0A [kQcm_] 1 x 103 2.7 0.15 Peak sensitivity wavelength [pm] 1.5 1.8 2.0 Peak detectivity [cm sqrt(Hz)/W] 7.5 x 1012 5 x 1011 |8 x 1010 | LINE SCAN CAMERA SYSTEM FOR XLIN ARRAYS

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required (2) Noise is measured with a linear InGaAs-1,7 device, operated at room temperature in the lowest gain setting (16pF) and with integration time 1ms.