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Specifications: Type:Topview Type(surface mount type) Wavelength λP(Typ.)[nm]:940 Visible Light Filter:Yes Operating Temperature (Min.)[°C]: -30 Operating Temperature (Max.)[°C]:+85
Si photodiodes are manufactured using advanced semiconductor process technologies. Diodes cover a wide spectral range starting from close to infrared to ultraviolet and expanding to high energy regions. The unit features ...
HAMAMATSU
Photodiode modules are high-precision photodetectors that integrate a Si photodiode and a current-to-voltage amplifier. The output from these photodiode modules is an analog voltage and ...
HAMAMATSU
... very low light levels and situations, all you need is the InGaAs APDs. To continue, this top speed and highly sensitive photodiodes boast an internal gain mechanism and is best suited for optical fiber communications, ...
HAMAMATSU
Functions: Appropriate with regard to reflow soldering Particularly ideal for purposes out of 400 nm - 1100 nm Limited changing time (typ. 20 ns) Appropriate for SMT Purposes Photointerrupters Commercial consumer electronics Intended ...
OSRAM Opto Semiconductors
The Fairchild Photo Sensors is a state of the art product. Which features a silicon PIN photodiode encapsulated in an infrared, transparent, black, plastic sidelooker package. It also exhibits Daylight filter, Sidelooker ...
Silicon Avalanche Photodiodes Si-APD are suitable for the spectral range from 255 nm to 1100 nm. Wide range of APDs Since the foundation of Laser Components Detector Group Inc. in 2004 we have built a product range ...
APD receivers have an integrated preamplifier and come in a compact, hermetically-sealed housing. APD Receivers APDs with matched, integrated pre-amplifier in compact hermetic packages. Our Receivers The performance of an APD ...
InGaAs avalanche photodiodes are used to detect light in the spectral range from 1100 nm to 1700 nm. They exhibit a significantly lower noise than germanium diodes. InGaAs APDs 1100 - 1700 nm These InGaAs avalanche ...
25Gbps Φ38μm GaAs PIN PD Chip Introduction This high data rate 25Gbps Photodiode Chip is GaAs PIN structure. Features is high responsibility (850nm Typ.: 0.6A/W), low capacitance (Typ.: 0.08pF), low dark current (Typ.: ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
Introduction This 25Gbps photodiode chip, which is bottom-illuminated high data rate PIN photodiode chip, Active area is Φ20μm. Its features have high responsivity (Typ. 1310nm: 0.85A/W),low capacitance ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
25Gbps Φ20μm Top-illuminated PIN PD Chip Introduction This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area of Φ20μm. Its features have high responsivity ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.
VISHAY
he high-reliability Lumentum 1310/1550 nm 10G XFP ROSA receiver optical sub-assembly (ROSA) product, designed specifically for the XFP transceiver, provides excellent performance over extended operating temperatures in high-speed applications ...
LUMENTUM
... filters. Photodiodes from Jenoptik: photodiodes for spectrally selective light and radiation detection For its photodiodes, Jenoptik uses A3B5 materials such as AlGaAs, GaP, InGaAs, AlGaN ...
JENOPTIK I Healthcare & Industry
JDSU EPM 6xx-Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in our wafer fab and assembled into a ...
JDSU
The DH-Si is a general purpose UV-enhanced silicon photodiode offering excellent linearity and low noise over the wavelength range of 200-1100nm. In addition to its' use throughout the UV-NIR range, the DH-Si, in certain ...
PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages, of proven manufacture and design. Our Germanium devices are suitable from 800 to 2100nm. All devices are available ...
PD-LD
UV-A Sensor GUVA-T21GD-U Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current Applications Full UV Band ...
How to choose this product
A photodiode is an electronic component composed of two semiconductors (p-n junction) which transforms light (photons) into an electrical signal (electrons).
Applications
The photodiode is used principally to detect and measure radiation. For example, the indium-gallium-arsenide (InGsAs) photodiode is a near-infrared (NIR) detector used to measure the power of a laser beam, in infrared spectroscopy and in optical communications.
Technologies
This device is a member of the photodetector family, as are phototransistors, photoconductors and photovoltaic cells. Many different materials can be used in its fabrication, the choice determining the range of detectable wavelengths. For example, PbSe, InSb and InGaAs versions are sensitive to the infrared spectrum. Most are manufactured using MOS technology, while others use BICOMS or bipolar technologies.
How to choose
The wavelength to be detected will determine the materials to be used. Constituents also govern photosensitivity. Dark current characteristics also should be considered.
Advantages
- Sensitivity
- Price
- Broad detection range
Disadvantages
- Dark current
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