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The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features -High sensitivity in ...
HAMAMATSU
... This high-speed photosensor was developed for optical fiber communication in the 0.85 µm band. This receptacle type Si PIN photodiode is compatible with GI-50 multimode optical fiber. Features - High-speed response: ...
HAMAMATSU
These are premolded package photodiodes that offer low dark current. There is little stray light incident from the side and back of the package to the photosensitive area, and they can measure from low to high illumination ...
HAMAMATSU
- Access Control & Security - Appliances & Tools - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Especially suitable for applications of 880 nm - Short switching time (typ. 20 ns) - 5 mm LED ...
OSRAM Opto Semiconductors
The Fairchild Photo Sensors is a state of the art product. Which features a silicon PIN photodiode encapsulated in an infrared, transparent, black, plastic sidelooker package. It also exhibits Daylight filter, Sidelooker ...
BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.
VEMD6010X01 is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm2 sensitive area detecting visible and near infrared radiation.
Introduction This 25Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal (GS) electrode structure, with top-illuminated active area size is Φ16μm. This product features is high multiplication, low capacitance, ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
Description This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
Description This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
The SG01S-18 is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best ...
Scitec Instruments
The SG01S-18S is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best ...
Scitec Instruments
The SG01S-18ISO90 is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the ...
Scitec Instruments
The photodiodes and LEDs from Jenoptik can be easily integrated into your existing systems or adapted to optoelectronic applications, and can also eliminate the need for external filters. Jenoptik Photodiodes ...
PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages, of proven manufacture and design. Our Germanium devices are suitable from 800 to 2100nm. All devices are available ...
PD-LD
The DH-Si is a general purpose UV-enhanced silicon photodiode offering excellent linearity and low noise over the wavelength range of 200-1100nm. In addition to its' use throughout the UV-NIR range, the DH-Si, in certain ...
he high-reliability Lumentum 1310/1550 nm 10G XFP ROSA receiver optical sub-assembly (ROSA) product, designed specifically for the XFP transceiver, provides excellent performance over extended operating temperatures in high-speed applications ...
LUMENTUM
Silicon Avalanche Photodiodes Si-APD are suitable for the spectral range from 255 nm to 1100 nm. Wide range of APDs Since the foundation of Laser Components Detector Group Inc. in 2004 we have built a product range ...
LASER COMPONENTS
UV-A Sensor GUVA-T21GD-U Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current Applications Full UV Band ...
A photodiode is an electronic component composed of two semiconductors (p-n junction) which transforms light (photons) into an electrical signal (electrons).
ApplicationsThe photodiode is used principally to detect and measure radiation. For example, the indium-gallium-arsenide (InGsAs) photodiode is a near-infrared (NIR) detector used to measure the power of a laser beam, in infrared spectroscopy and in optical communications.
TechnologiesThis device is a member of the photodetector family, as are phototransistors, photoconductors and photovoltaic cells. Many different materials can be used in its fabrication, the choice determining the range of detectable wavelengths. For example, PbSe, InSb and InGaAs versions are sensitive to the infrared spectrum. Most are manufactured using MOS technology, while others use BICOMS or bipolar technologies.
How to chooseThe wavelength to be detected will determine the materials to be used. Constituents also govern photosensitivity. Dark current characteristics also should be considered.
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