Photodiodes

14 companies | 91 products
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infrared photodiode
infrared photodiode
S16008-66

The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features -High sensitivity in ...

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HAMAMATSU
PIN photodiode
PIN photodiode
S12109-32

... This high-speed photosensor was developed for optical fiber communication in the 0.85 µm band. This receptacle type Si PIN photodiode is compatible with GI-50 multimode optical fiber. Features - High-speed response: ...

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HAMAMATSU
wavelength-sensitive photodiode
wavelength-sensitive photodiode
S16-MS series

These are premolded package photodiodes that offer low dark current. There is little stray light incident from the side and back of the package to the photosensitive area, and they can measure from low to high illumination ...

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HAMAMATSU
silicon photodiode
silicon photodiode
Radial Sidelooker series

- Access Control & Security - Appliances & Tools - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Especially suitable for applications of 880 nm - Short switching time (typ. 20 ns) - 5 mm LED ...

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OSRAM Opto Semiconductors
silicon photodiode
silicon photodiode
QS series

The Fairchild Photo Sensors is a state of the art product. Which features a silicon PIN photodiode encapsulated in an infrared, transparent, black, plastic sidelooker package. It also exhibits Daylight filter, Sidelooker ...

photodiode
photodiode

BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.

silicon photodiode
silicon photodiode
VEMD6010X01

VEMD6010X01 is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm2 sensitive area detecting visible and near infrared radiation.

InGaAs photodiode
InGaAs photodiode
XSJ-10-APD6-16

Introduction This 25Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal (GS) electrode structure, with top-illuminated active area size is Φ16μm. This product features is high multiplication, low capacitance, ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-D6-32A

Description This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-D6-32

Description This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
silicon photodiode
silicon photodiode
202572

UV photodiode
UV photodiode
SG01S-18

The SG01S-18 is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best ...

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Scitec Instruments
UV photodiode
UV photodiode
SG01S-18S

The SG01S-18S is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best ...

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Scitec Instruments
UV photodiode
UV photodiode
SG01S-18ISO90

The SG01S-18ISO90 is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the ...

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Scitec Instruments
InGaAs photodiode
InGaAs photodiode

The photodiodes and LEDs from Jenoptik can be easily integrated into your existing systems or adapted to optoelectronic applications, and can also eliminate the need for external filters. Jenoptik Photodiodes ...

avalanche photodiode
avalanche photodiode

PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages, of proven manufacture and design. Our Germanium devices are suitable from 800 to 2100nm. All devices are available ...

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PD-LD
silicon photodiode
silicon photodiode
DH-Si

The DH-Si is a general purpose UV-enhanced silicon photodiode offering excellent linearity and low noise over the wavelength range of 200-1100nm. In addition to its' use throughout the UV-NIR range, the DH-Si, in certain ...

infrared photodiode
infrared photodiode
LTR series

avalanche photodiode
avalanche photodiode

he high-reliability Lumentum 1310/1550 nm 10G XFP ROSA receiver optical sub-assembly (ROSA) product, designed specifically for the XFP transceiver, provides excellent performance over extended operating temperatures in high-speed applications ...

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LUMENTUM
silicon photodiode
silicon photodiode

Silicon Avalanche Photodiodes Si-APD are suitable for the spectral range from 255 nm to 1100 nm. Wide range of APDs Since the foundation of Laser Components Detector Group Inc. in 2004 we have built a product range ...

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LASER COMPONENTS
UV photodiode
UV photodiode
GUVA-T21GD-U

UV-A Sensor GUVA-T21GD-U Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current Applications Full UV Band ...

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How to choose this product
photodiode

A photodiode is an electronic component composed of two semiconductors (p-n junction) which transforms light (photons) into an electrical signal (electrons).

Applications

The photodiode is used principally to detect and measure radiation. For example, the indium-gallium-arsenide (InGsAs) photodiode is a near-infrared (NIR) detector used to measure the power of a laser beam, in infrared spectroscopy and in optical communications.

Technologies

This device is a member of the photodetector family, as are phototransistors, photoconductors and photovoltaic cells. Many different materials can be used in its fabrication, the choice determining the range of detectable wavelengths. For example, PbSe, InSb and InGaAs versions are sensitive to the infrared spectrum. Most are manufactured using MOS technology, while others use BICOMS or bipolar technologies.

How to choose

The wavelength to be detected will determine the materials to be used. Constituents also govern photosensitivity. Dark current characteristics also should be considered.

Advantages

- Sensitivity
- Price
- Broad detection range

Disadvantages

- Dark current