PIN photodiode XSJ-10-G6-38H-K4

Description This high data rate 100 Gbps photodiode chip is GaAs top- illuminated PIN structure. Features are high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 100Gigabit Ethernet and Multi-mode communication, etc. The product dimensions are specifically tailored for non-hermetic package. Features 1. Φ38μm active area. 2. Low capacitance, low dark current, high responsibility. 3. GS bond pad design. 4. Die pitch: 250μm. 5. 100% testing and inspection. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 7. RoHS2.0 (2011/65/EU) compliant. Applications 1. 100G SR4