InGaAs photodiode XSJ-10-M-500BM

PIN

Description This top-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode on top and cathode on back. Active area size is Φ500μm, and high responsivity in the wavelength region from 1100nm to 1700nm. Application in monitoring the optical power output from the back facet of various LD. Features Φ500μm active area. High responsibility. High linearity. Low dark current. Low operating bias voltage. Supporting for AnSn solder process. -40℃ to 85℃ operation range. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Customized chip dimension is available. RoHS2.0 (2011/65/EU) compliant. Applications Back facet laser power monitoring.