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... This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This 25Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal (GS) electrode structure, with top-illuminated active area size is Φ16μm. This product features is high multiplication, low capacitance, high bandwidth, low temperature ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This Edge-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode and double cathode on top. Edge detectable area size is 100μmX80μm, and higher responsivity in the wavelength region ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This 56GBaud photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is Φ16μm. Its features have high responsivity, low capacitance, low dark current and excellent ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... The XSJ-10-EMPD-120R is an edge-illuminated InGaAs/InP monitor PIN photodiode chip, which is planar structure with anode contact and cathode contact on top. The photodiode edge detectable area size is 120μmX60μm, which ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This top-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode on top and cathode on back. Active area size is Φ500μm, and high responsivity in the wavelength region from 1100nm ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... /200Gbps Bottom-illuminated PIN PD Chip Introduction This 112GBaud 200Gbps photodiode chip, which is bottom-illuminated and mesa structure high data rate PIN photodiode chip, with Φ90μm lens integrated on chip,s bottom. ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... High performance optical head transmitter for DSP-based 1.6Tbps data center optical modules Key Features Silicon photonics monolithically integrated laser and modulators 224Gbps PAM4 modulators ...
... interpolated up to 256 times. The IC contains three instrumentation amplifiers to which sensors with voltage interfaces and measuring bridges can be connected directly. Sensors with a current interface or photodiode ...
AMAC ASIC - und Mikrosensoranwendung Chemnitz GmbH
... systems with sinusoidal output signals phase-shifted by 90°. The IC is suitable for sensors with a standardized voltage or Power interface, as well as for the direct connection of photodiode arrays and sensor measuring ...
AMAC ASIC - und Mikrosensoranwendung Chemnitz GmbH
... Multi Quantum Well Distributed Feedback Laser Direct modulation beyond 2.5Gbps Uncooled operation from -20°C to +85 °C Designed for Telcordia GR-468 Small farfield Applications PON, ACCESS, Optical Ethernet, SDH ...
Guilin GLSUN Science and Tech Group Co., Ltd
... Multi Quantum Well Distributed Feedback Laser Direct modulation up to 25Gbps over operating temperature Uncooled operation from -20°C to +75°C Designed for Telcordia GR-468 Applications 5G, Datacenter Laser Type：DFB Wavelength：1270nm, ...
Guilin GLSUN Science and Tech Group Co., Ltd
... The monolithic CMOS integrated circuit converts the input sine and cosine signals, as well as the analogue reference signal into digital signals with adjustable subdividing factor (1, 2, 3, 4, 5, 8, 10). The reference signal pulse width ...
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