InGaAs photodiode XSJ-10-EMPD-120R

PIN

Description The XSJ-10-EMPD-120R is an edge-illuminated InGaAs/InP monitor PIN photodiode chip, which is planar structure with anode contact and cathode contact on top. The photodiode edge detectable area size is 120μmX60μm, which suitable for edge emitting lasers used in data center and telecom applications, and offer excellent responsivity in the wavelength region from 980nm to 1620nm. The product dimensions are specifically tailored for non-hermetic package. Features PN bond pad on top and suitable for non-hermetic package. Edge detectable area: 120μmX60μm. High responsibility and low dark current. Low operating bias voltage. -40℃ to 85℃ operation range. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Customized chip dimension is available. Applications Back facet laser power monitoring. FTTH digital optical communications. Optical interconnection.