Photodiode array XSJ-10-D7-16X

Description This 56GBaud photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is Φ16μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with low noise transimpedance amplifiers (TIA), applied to 4X56GBuad PAM 4 data center transmission and 100 Gigabit Ethernet. Features Φ16μm active area. Ground-Signal-Ground (GSG) bond pad structure on top. Low dark current. Low capacitance. High responsibility. Bandwidth: ≥35GHz (With TIA). Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications 4X56GBuad PAM-4. 100 Gigabit Ethernet.