PIN photodiode array XSJ-10-D8A-80L-KB4-500

chip

4X200Gbps 500μm Die Pitch 1X4Array Bottom-illuminated PIN PD Chip This 4X112GBaud Array 800Gbps photodiode chip, which is bottom-illuminated and mesa structure high data rate PIN photodiode chip, with Φ80μm lens integrated on chip's bottom. Its features are high, low capacitance, low dark current and excellent reliability, application 910nm to 1650nm with single mode fiber wavelength, with date rate up to 200Gbps long wavelength optical receiver. Features 1.Φ80pm lens integrated on bottom. 2. Ground-Signal-Ground (GSG) bond pad structure,4X112GBaud array. 3. Low dark current, low capacitance, high responsibility. 4. Date rate:≥ 112GBaud/channel. 5. Die pitch: 500μm. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 7. 100% testing and inspection. 8. RoHS2.0 (2011/65/EU) compliant. Applications 1. 800G Optical Modules 2. 1.6T Optical Modules