Infrared photodiode S1000R

IR optical Senser Chip High ESD design, high responsiveness, low dark current, positive illumination type, anode on the front and cathode on the back, round active area size is Ф 1000μ m. It has extremely high responsiveness in the range of 900nm~1700nm and is mainly used for LD backlight detection. Features 1. High electro-static discharge design, high responsibility(900nm~1700nm), low dark current, top illuminated, anode on top and cathode on back. 2. Φ=1000μm, round active area. 3. All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE, RoHS2.0 (2011/65/EU) compliant.