PIN photodiodes

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PIN photodiode
PIN photodiode
S12109-32

... This high-speed photosensor was developed for optical fiber communication in the 0.85 µm band. This receptacle type Si PIN photodiode is compatible with GI-50 multimode optical fiber. Features - High-speed ...

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HAMAMATSU
InGaAs photodiode
InGaAs photodiode
G12183-210KA-03

Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability - High-speed response - ...

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HAMAMATSU
InGaAs photodiode
InGaAs photodiode
G1-32 series

We have arranged the photodiode and lens in the optimal positions so that this receptacle type InGaAs PIN photodiode has significantly reduced multiple reflections inside the module. ...

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HAMAMATSU
silicon photodiode
silicon photodiode
Radial Sidelooker series

- Access Control & Security - Appliances & Tools - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Especially suitable for applications of 880 nm - Short switching time (typ. 20 ns) - 5 mm LED ...

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OSRAM Opto Semiconductors
avalanche photodiode
avalanche photodiode
XSJ-10-APD6-16X

Description This 25Gbps APD light detector chip is a GSG electrode structure, which is a high-speed avalanche light detector chip with positive light entry, and the photosensitive zone size is Φ16μm. The main features of the product ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
avalanche photodiode
avalanche photodiode
XSJ-10-APD6-16

Description The 25Gbps APD light detector chip is a GS electrode structure, for the front into the light of high-speed avalanche light detector chip, the photosensitive area size is Φ16um, the main characteristics of the product is ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-APD5-40

Description This 10Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal-Ground (GSG) electrode structure, with top-illuminated active area size is Φ40μm. This product features is high multiplication, ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
IAG Series

InGaAs avalanche photodiodes are used to detect light in the spectral range from 1100 nm to 1700 nm. They exhibit a significantly lower noise than germanium diodes. InGaAs APDs 1100 - 1700 nm These InGaAs avalanche ...

UV photodiode
UV photodiode
SG01S-18

... measured reliably. • UV Broadband • 0.06mm2 detector area • TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin • 10 mW/cm2 irradiation at 280 nm (peak responsivity) results a ...

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Scitec Instruments
avalanche photodiode
avalanche photodiode

PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages, of proven manufacture and design. Our Germanium devices are suitable from 800 to 2100nm. All devices ...

avalanche photodiode
avalanche photodiode

... provides excellent performance over extended operating temperatures in high-speed applications up to 10G. The product integrates PIN and TIA chips in a custom hermetic TO46 package. Each device is actively aligned to ...

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LUMENTUM
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