Photodiode array XSJ-10-D5A-32-K4

Description This 4X16Gbps Array photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is Φ32μm. Its features are high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X16Gbps quad channel transimpedance amplifiers(TIA),applications in long wavelength applications, high date rate up to 4X16Gbps with single mode fiber optical receiver. Features Φ32μm active area. Ground-Signal-Ground (GSG) bond pad structure, 4X16Gbps array. Low dark current, low capacitance, high responsibility. Date rate: ≤16Gbps/channel. Die pitch: 250μm Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications 4X16Gbps CWDM CFP 40Gbps SFP+ LR4 Parallel optical interconnection