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... 4X200Gbps 500μm Die Pitch 1X4 Array Bottom-illuminated PIN PD Chip This 4X112GBaud Array 800Gbps photodiode chip, which is bottom-illuminated and mesa structure high ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... The 8X56Gbaud (8X112Gbps PAM4) array light detector chip is a high-speed digital PIN light detector chip with a top entry light and a mesa structure, and the photosensitive zone size is Φ20μm. Characterized ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... The 4X56GBaud array 400Gbps light detector chip is a high-speed digital PIN light detector chip with top input light and mesa structure, and the photosensitive area size is Φ16μm. The main features of ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This 4X56GBaud Array 400Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ16μm. Its features ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... The 4X56GBaud array 400Gbps light detector chip is a high-speed digital PIN light detector chip with top input light and mesa structure, and the photosensitive area size is Φ22μm. The main features of ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... The 4X56GBaud array 400Gbps photodetector chip is a high-speed digital PIN photodetector chip with top light input and mesa structure, and the size of the photosensitive area is Φ 24um. The main characteristics ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... The 4X25G array 100Gbps photodetector chip is a high-speed digital PIN photodetector chip with top light input and mesa structure, and the size of the photosensitive area is Φ 20um. The main characteristics ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... Ground-Signal-Ground (GSG) bond pad structure, 4X10Gbps array. 3. Low dark current, low capacitance, high responsibility. 4. Die pitch: 250μm. 5. 100% testing and inspection. 6. Excellent reliability: All chips have ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... This 4X25Gbps Array 100Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ32μm. Its features ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... NRZ/4X56Gbps PAM-4 photodiode chip is GaAs top- illuminated 1x4 Array PIN structure. Features are high responsibility, low capacitance and low dark current, active area size is Φ35μm, signal and both ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
... consists of 6- chip photodiodes produced in planar technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with ...
RLS
... consists of 6- chip photodiodes produced in planar technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with ...
RLS
... technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or ...
RLS
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