1. Metrology - Laboratory
  2. Optical Component
  3. InGaAs photodiode
  4. PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.

InGaAs photodiode XSJ-10-D6A-20-K4-750
PIN

InGaAs photodiode
InGaAs photodiode
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Characteristics

Type
InGaAs
Mounting
PIN

Description

Description The 4X56GBaud array 400Gbps photodetector chip is a high-speed digital PIN photodetector chip with top light input and mesa structure, and the size of the photosensitive area is Φ 24um. The main characteristics of the product are high responsiveness, low capacitance, low dark current, and high reliability. This product is applied to single mode 910nm to 1650nm wavelengths of 50Gbps or above data rate long wavelength optical receivers. Features 1. Φ20μm active area. 2. Ground-Signal-Ground (GSG) bond pad structure, 4X25G array. 3. Low dark current, low capacitance, high responsibility. 4. Date rate: ≥ 25Gbps/channel. 5. Die pitch: 750μm. 6. 100% testing and inspection. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. RoHS2.0 (2011/65/EU) compliant. Applications 1. IEEE 100 Gigabit Ethernet 2. 100G CWDM4, PSM4, CLR4 3. 100G(4X25Gbps) links

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