Photodiode microchip PHG1-D8-90LA-KB

112GBaud/200Gbps Bottom-illuminated PIN PD Chip Introduction This 112GBaud 200Gbps photodiode chip, which is bottom-illuminated and mesa structure high data rate PIN photodiode chip, with Φ90μm lens integrated on chip,s bottom. Its features is high bandwidth, high responsivity, low capacitance, low dark current and excellent reliability, application 980nm to 1650nm with single mode fiber wavelength , with date rate up to 200Gbps long wavelength optical receiver. Features 1. Φ90μm lens integrated on bottom. 2. Ground-Signal-Ground (GSG) bond pad structure. 3. Low dark current. 4. Low capacitance. 5. High responsibility. 6. High bandwidth: 50GHz. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. 100% testing and inspection. 9. RoHS2.0 (2011/65/EU) compliant. Applications 1. 800G Optical Modules. 2. 1.6T Optical Modules.