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- InGaAs photodiode
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InGaAs photodiode XSJ-10-APD6-16avalanchePINchip on carrier
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Characteristics
- Type
- InGaAs, avalanche
- Mounting
- PIN, chip on carrier
Description
Introduction
This 25Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal (GS) electrode structure, with top-illuminated active area size is Φ16μm. This product features is high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 25G EPON, 5G Wireless and 100GBASE-ER4.
Features
Φ16μm active area.
High multiplication.
High data rate: 25Gbps above.
Low capacitance.
Low temperature coefficient.
Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
100% testing and inspection.
Applications
25Gbps PON
100GBASE-ER4（ER4-lite）
5G Wireless.
Catalogs
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5G/4G Communication Applications
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