InGaAs photodiode XSJ-10-D6-20

PIN

Description This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. Features Φ20μm active area. Ground-Signal-Ground (GSG) bond pad structure on top. Low dark current, low capacitance, high responsibility. Date rate up to 25Gbps. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. RoHS2.0 (2011/65/EU) compliant. Applications 100 Gigabit Ethernet 20GHz analog links. High speed test and measurement.