InGaAs photodiode XSJ-10-D6-32A

PIN

Description This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance 25Gbps transimpedance amplifiers (TIA), applications in long haul applications, high date rate up to 25Gbps with single mode fiber optical receiver. Features Φ32μm active area. Mesa structure, Ground-Signal-Ground (GSG) bond pad on top. Low dark current, low capacitance. High responsibility. Type Bandwidth: 16GHz. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. RoHS2.0 (2011/65/EU) compliant. Applications 25Gbps data transmission. 5G wireless communication.