Avalanche photodiode C30683

InGaAs

Overview
The C30683 series integrates an avalanche photodiode (APD) and a high-speed transimpedance amplifier (TIA) in a hermetically sealed TO-8 package for precision low-light detection. Models support silicon and InGaAs APDs and deliver system bandwidths up to 450 MHz, low noise-equivalent power (NEP), and differential outputs for demanding optical sensing and range-finding systems.

Key product notes

• Built-in thermistor for APD temperature monitoring and compensation of the high-voltage bias to maintain stable gain.
• Available APD options: Silicon (C30737, 500 µm) and InGaAs (C30645, 80 µm; C30662, 200 µm).
• Typical part numbers: C30683-900-R5DH, C30683-1550-R08DH, C30683-1550-R2BH.

Features

• Integrated APD with first gain stage in hermetic TO-8 package
• Choice of Silicon or InGaAs detectors
• System bandwidth up to 450 MHz (model dependent)
• 50 Ω AC load capability (AC-coupled)
• Amplifier operating voltage: +3.3 V
• Differential output for noise rejection

Applications

• LiDAR and range finding
• Free-space optical communications
• Extreme low-light detection and analytical instrumentation
• Distributed temperature sensing (DTS)
• Confocal microscopy and photonics test equipment

Specifications

• Series: C30683
• Package: Hermetically sealed TO-8 with integrated APD and first gain stage
• APD options & typical sizes: Silicon (C30737, 500 µm); InGaAs (C30645, 80 µm; C30662, 200 µm)
• Responsivity: up to 550 kV/W (900 nm) or 120 kV/W (1550 nm), model dependent
• NEP: down to 37 fW/√Hz (model dependent)
• System bandwidth: up to 450 MHz (model dependent)
• Load capability: 50 Ω AC (AC-coupled)
• Amplifier supply: +3.3 V
• Output: Differential
• Temperature monitoring: Integrated thermistor for APD temperature compensation