Avalanche photodiode (APD) module C30737LH-230-81N

Product Overview
The C30737LH-230-81N silicon avalanche photodiode (Si APD) offers enhanced response at 800 nm with a 230 µm active diameter and a 635 nm bandpass on the glass window. Supplied in a leadless ceramic carrier (LCC) with a 3×3 mm window, it is optimized for high-speed detection in compact assemblies.

Key Features

• Optical bandpass filter centered at 635 nm
• Low noise and very fast rise times across wavelengths; frequency response > 1.5 GHz
• 230 µm active diameter optimized for 800 nm sensitivity
• Gain ~100 @ 635 nm; responsivity 35 A/W at 800 nm
• Leadless ceramic carrier (LCC) with 3×3 mm glass window

Applications

• LiDAR and time-of-flight sensors
• Laser range-finding and distance measurement
• Security and scanning sensors
• Cost-sensitive, high-performance detection modules

Specifications
Active diameter: 230 µm
Peak sensitivity wavelength: 635 nm
Breakdown voltage Vbd: 120–210 V (binning available)
Temperature coefficient of Vop for constant M: 0.5 V/°C
Gain: 100 @ 635 nm
Responsivity: 35 A/W at 800 nm
Dark current Id: 0.05–0.5 nA
Noise current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/fall time: 0.2 ns (Rload = 50 Ω)
Cut-off frequency: 1.5 GHz
Storage temperature: -50 °C to +100 °C
Operating temperature: -40 °C to +85 °C
Package: 3×3 mm glass window, leadless ceramic carrier (LCC)
Window: 635 nm bandpass filter

Technical specifications

• Active diameter: 230 µm
• Peak sensitivity wavelength: 635 nm
• Breakdown voltage Vbd: 120–210 V (binning available)
• Temperature coefficient of Vop for constant M: 0.5 V/°C
• Gain: 100 @ 635 nm
• Responsivity: 35 A/W at 800 nm
• Dark current Id: 0.05–0.5 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/fall time: 0.2 ns (Rload = 50 Ω)
• Cut-off frequency: 1.5 GHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: 3×3 mm glass window, leadless ceramic carrier (LCC)
• Window: 635 nm bandpass filter