Product description:The C30737LH-300-73N silicon avalanche photodiode (APD) features a 300 µm active diameter, enhanced response around 800 nm and an integrated 650 nm optical bandpass filter in a leadless ceramic carrier (LCC) with a 3×3 mm glass window.
Key Features:- High responsivity filtered at 650 nm
- Low noise and very fast rise time; frequency response above 700 MHz
- 300 µm active diameter optimized for near-infrared (800 nm)
- Integrated 650 nm optical bandpass filter (window)
- Leadless ceramic carrier (LCC) package with glass window
Applications:- Laser range-finding
- Distance meters / rangefinders
- Area and security scanning
- Cost-sensitive applications requiring a high-performance detector
Technical specifications:- Active Diameter: 300 µm
- Peak Sensitivity Wavelength: 650 nm
- Breakdown Voltage Vbd: 110–165 V
- Temperature Coefficient of Vop for Constant M: 0.6 V/°C
- Gain: 100 @ 800 nm
- Responsivity: 30 A/W at 650 nm
- Dark Current Id: 1 nA
- Noise Current: 0.2 pA/√Hz
- Capacitance: 0.7 pF
- Cut-off Frequency: 700 MHz
- Storage Temperature: -40°C to +100°C
- Operating Temperature: -20°C to +60°C
- Package: 3×3 mm glass window, leadless ceramic carrier (LCC)
- Window: 650 nm filter window