LIDAR photodiode C30737LH-300-73N
avalancheinfraredsilicon

LIDAR photodiode - C30737LH-300-73N - Excelitas Technologies - PCO - avalanche / infrared / silicon
LIDAR photodiode - C30737LH-300-73N - Excelitas Technologies - PCO - avalanche / infrared / silicon
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Characteristics

Type
LIDAR, avalanche, infrared, silicon, wavelength-sensitive
Mounting
chip on carrier

Description

Product description:
The C30737LH-300-73N silicon avalanche photodiode (APD) features a 300 µm active diameter, enhanced response around 800 nm and an integrated 650 nm optical bandpass filter in a leadless ceramic carrier (LCC) with a 3×3 mm glass window.

Key Features:
  • High responsivity filtered at 650 nm
  • Low noise and very fast rise time; frequency response above 700 MHz
  • 300 µm active diameter optimized for near-infrared (800 nm)
  • Integrated 650 nm optical bandpass filter (window)
  • Leadless ceramic carrier (LCC) package with glass window

Applications:
  • Laser range-finding
  • Distance meters / rangefinders
  • Area and security scanning
  • Cost-sensitive applications requiring a high-performance detector

Technical specifications:
  • Active Diameter: 300 µm
  • Peak Sensitivity Wavelength: 650 nm
  • Breakdown Voltage Vbd: 110–165 V
  • Temperature Coefficient of Vop for Constant M: 0.6 V/°C
  • Gain: 100 @ 800 nm
  • Responsivity: 30 A/W at 650 nm
  • Dark Current Id: 1 nA
  • Noise Current: 0.2 pA/√Hz
  • Capacitance: 0.7 pF
  • Cut-off Frequency: 700 MHz
  • Storage Temperature: -40°C to +100°C
  • Operating Temperature: -20°C to +60°C
  • Package: 3×3 mm glass window, leadless ceramic carrier (LCC)
  • Window: 650 nm filter window

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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