Avalanche photodiode (APD) module C30659-900-R5BH

Overview
The C30659 Series comprises a Silicon (Si) Avalanche Photodiode (APD) paired with a hybrid preamplifier in a hermetically sealed TO-8 package for ultra-low-noise detection. The C30659-900-R5BH variant integrates a C30902EH Si APD with a 900 nm peak responsivity and a 0.5 mm active diameter.

Key features and functional description
The module uses an inverting amplifier topology with an emitter-follower output buffer. The preamplifier front end employs a very low-noise GaAs FET to achieve higher transimpedance than standard C30950 Series modules. Si APDs in the C30659 family match devices used in C30817EH, C30902EH, C30954EH and C30956EH; InGaAs APDs are used in related C30645EH and C30662EH variants. These detectors offer strong sensitivity across the near-infrared and visible ranges and deliver fast rise and fall times across wavelengths.

Applications

• Low-noise photodetection in compact, hermetically sealed packages
• Systems requiring fast temporal response and high-transimpedance preamplification

Specifications

• System bandwidth: 200 MHz
• Noise equivalent power (NEP): 35 fW/√Hz at 830 nm; 40 fW/√Hz at 900 nm
• Spectral response range: 400 to 1100 nm
• Typical power consumption: 150 mW
• Amplifier operating voltages: ±5 V
• 50 Ω AC load capability (AC-coupled)
• Hermetically sealed TO-8 package
• Active detector element: C30902EH Si APD, 900 nm peak response, 0.5 mm active diameter