Infrared photodiode C30737LH-300-70N

wavelength-sensitivesiliconavalanche

Product Description:
The C30737LH-300-70N Silicon avalanche photodiode (Si APD) provides a 300 µm active diameter and enhanced sensitivity near 800 nm in a leadless ceramic carrier (LCC) package. It is designed for fast optical detection with wide spectral responsivity and low noise, suitable for laser-ranging and precision optical sensing.

Key Features:

• High responsivity from 500 nm to 1000 nm with peak at 800 nm
• Low noise and very fast rise time; frequency response above 700 MHz
• 300 µm active diameter optimized for 800 nm
• Leadless ceramic carrier option LH (LCC)

Applications:

• Laser range-finding and distance meters
• Area scanning and security scanning systems
• Cost-sensitive, high-performance optical detector modules

Technical specifications:

• Active Diameter: 300 µm
• Peak Sensitivity Wavelength: 800 nm
• Breakdown Voltage (Vbd): 110–165 V
• Temperature Coefficient of Vop for constant M: 0.6 V/°C
• Gain: 100 @ 800 nm
• Responsivity: 55 A/W at 800 nm
• Dark Current: 1 nA
• Noise Current: 0.2 pA/√Hz
• Capacitance: 0.7 pF
• Cut-off Frequency: 700 MHz
• Storage Temperature: -40°C to +100°C
• Operating Temperature: -20°C to +60°C
• Package: 3×3 mm glass-window leadless ceramic carrier (LCC)
• Window: standard window