Wavelength-sensitive photodiode C30642GH-LC
LIDARInGaAsinfrared

Wavelength-sensitive photodiode - C30642GH-LC - Excelitas Technologies - PCO - LIDAR / InGaAs / infrared
Wavelength-sensitive photodiode - C30642GH-LC - Excelitas Technologies - PCO - LIDAR / InGaAs / infrared
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Characteristics

Type
wavelength-sensitive, LIDAR, InGaAs, infrared
Mounting
PIN

Description

Description
The C30642GH-LC is a large-area InGaAs PIN photodiode featuring a 2.0 mm active diameter chip housed in a TO-5 package with a flat glass window. It delivers high quantum efficiency across 800–1700 nm, ultra-low capacitance (approximately 50% of standard types) for roughly twice the 3 dB bandwidth, high responsivity, high shunt resistance and very low dark current. Typical devices show less than 1% non-linearity and uniformity within 2% over the active area, making the detector suitable for precision optical measurement and high-speed applications.

Features & Benefits
  • Ultra-low capacitance for increased bandwidth
  • High responsivity at 1300 nm and 1550 nm
  • Large active area: 2.0 mm diameter
  • High linearity across a wide dynamic range
  • Offered in robust TO-5 packages with flat glass window
  • Custom options available (e.g. integrated TEC)
  • RoHS compliant


Applications
  • Optical power meters and sensors
  • Fiber-optic test and measurement equipment
  • Near-infrared (NIR) spectroscopy
  • Laser beam profiling stations
  • Laboratory and industrial instrumentation
  • LiDAR receivers and optical detection systems


Specifications (typical responsivity)
  • 0.20 A/W at 850 nm
  • 0.90 A/W at 1300 nm
  • 1.05 A/W at 1550 nm


Technical specifications
  • Model: C30642GH-LC
  • Detector material: InGaAs PIN
  • Active area diameter: 2.0 mm
  • Package: TO-5 with flat glass window
  • Spectral response / high quantum efficiency range: 800 nm to 1700 nm
  • Responsivity (typical): 0.20 A/W @ 850 nm; 0.90 A/W @ 1300 nm; 1.05 A/W @ 1550 nm
  • Ultra-low capacitance (~50% of standard type), resulting in approximately 2× 3 dB bandwidth versus standard type
  • High shunt resistance
  • Low dark current
  • Linearity: typical devices less than 1% non-linearity across active area
  • Uniformity: within 2% across detector active area
  • Available customizations: e.g. integrated TEC options
  • Compliance: RoHS compliant

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

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