Avalanche photodiode (APD) module C30659-1060-R8BH

Product Overview
The C30659 Series of hybrid optical APD receivers integrates a Silicon (Si) avalanche photodiode (APD) and a hybrid preamplifier in a hermetically sealed TO-8 package for ultra-low-noise operation. The C30659-1060-R8BH includes a C30954EH Si APD optimized at 1060 nm with a 0.8 mm active diameter.

Features

• Inverting amplifier design with an emitter follower used as an output buffer stage.
• Si APDs used are the same as in Excelitas C30817EH, C30902EH, C30954EH and C30956EH products; InGaAs APDs are used in the C30645EH and C30662EH products.
• Detectors provide strong response between 830 and 1550 nm and very fast rise- and fall-times across wavelengths.
• Preamplifier section uses a very low-noise GaAs FET front end designed to operate at higher transimpedance than the standard C30950 Series.

Documentation
Datasheet: Excelitas C30659 Series Si APD receiver (product datasheet available).

Technical specifications

• System bandwidth: 200 MHz
• Ultra low noise equivalent power (NEP):
  • 55 fW/√Hz at 900 nm
  • 100 fW/√Hz at 1064 nm
• Spectral response range: 400 to 1100 nm, optimized at 1060 nm
• Typical power consumption: 150 mW
• Amplifier operating voltages: ±5 V
• 50 Ω AC load capability (AC-coupled)
• Hermetically sealed TO-8 package
• High reliability